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First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate
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- M. Razeghi
- THOMSON–CSF/Laboratoire Central de Recherches, B. P. n°10, 91401 Orsay Cedex, France
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- M. Defour
- THOMSON–CSF/Laboratoire Central de Recherches, B. P. n°10, 91401 Orsay Cedex, France
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- F. Omnes
- THOMSON–CSF/Laboratoire Central de Recherches, B. P. n°10, 91401 Orsay Cedex, France
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- P. Maurel
- THOMSON–CSF/Laboratoire Central de Recherches, B. P. n°10, 91401 Orsay Cedex, France
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- R. Blondeau
- THOMSON–CSF/Laboratoire Central de Recherches, B. P. n°10, 91401 Orsay Cedex, France
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- F. Brillouet
- Centre National d’Etudes et des Télécommunications, 196, avenue H. Ranera, 92220 Bagneux, France
Bibliographic Information
- Published
- 1988-09-05
- DOI
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- 10.1063/1.100093
- Publisher
- AIP Publishing
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Description
<jats:p>We report in this letter the first successful fabrication of an InP-GaInAsP light-emitting diode, emitting at 1.15 μm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 mA), and showed no degradation.</jats:p>
Journal
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- Applied Physics Letters
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Applied Physics Letters 53 (10), 854-855, 1988-09-05
AIP Publishing
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Details 詳細情報について
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- CRID
- 1360861293983342080
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- DOI
- 10.1063/1.100093
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- ISSN
- 10773118
- 00036951
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- Data Source
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- Crossref
