{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360865815494046848.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1002/pssb.202300275"}},{"identifier":{"@type":"URI","@value":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202300275"}}],"resourceType":"学術雑誌論文(journal article)","dc:title":[{"@value":"Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H‐SiC"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>Electron mobility parallel to the <jats:italic>c</jats:italic>‐axis in 4H‐SiC is experimentally determined by Hall effect measurements over wide donor density and temperature ranges (6 × 10<jats:sup>14</jats:sup>–3 × 10<jats:sup>18</jats:sup> cm<jats:sup>−3</jats:sup> and 140–600 K), and it is compared with that perpendicular to the <jats:italic>c</jats:italic>‐axis obtained for the same conditions. Empirical equations for the mobility along both directions are determined as functions of donor density and temperature, which contribute to the simulation and designing of SiC devices. The origin of the mobility anisotropy is discussed, focusing on the electron effective mass anisotropy. For a precise analysis, taking into account the effect of electrons at a higher energy region than the conduction band bottom, an average electron effective mass considering the energy distribution is theoretically calculated from the band structure of SiC. As a result, it is clarified that the electron mobility anisotropy including its temperature dependence is explained by the average electron effective mass anisotropy.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380865815494046720","@type":"Researcher","foaf:name":[{"@value":"Ryoya Ishikawa"}],"jpcoar:affiliationName":[{"@value":"Department of Electronic Science and Engineering Kyoto University  Nishikyo Kyoto 615-8510 Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380865815494046851","@type":"Researcher","foaf:name":[{"@value":"Hajime Tanaka"}],"jpcoar:affiliationName":[{"@value":"Department of Electronic Science and Engineering Kyoto University  Nishikyo Kyoto 615-8510 Japan"},{"@value":"Division of Electrical Electronic and Infocommunications Engineering Osaka University  Suita Osaka 565-0871 Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380865815494046848","@type":"Researcher","foaf:name":[{"@value":"Mitsuaki Kaneko"}],"jpcoar:affiliationName":[{"@value":"Department of Electronic Science and Engineering Kyoto University  Nishikyo Kyoto 615-8510 Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380865815494046850","@type":"Researcher","foaf:name":[{"@value":"Tsunenobu Kimoto"}],"jpcoar:affiliationName":[{"@value":"Department of Electronic Science and Engineering Kyoto University  Nishikyo Kyoto 615-8510 Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"03701972"},{"@type":"EISSN","@value":"15213951"}],"prism:publicationName":[{"@value":"physica status solidi 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Electronics"}]},{"@id":"https://cir.nii.ac.jp/crid/1040858829283699968","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"22KJ1957"},{"@type":"JGN","@value":"JP22KJ1957"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22KJ1957/"}],"notation":[{"@language":"ja","@value":"低電界および高電界における炭化ケイ素中のキャリア輸送機構と異方性の解明"}]}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050001202107910784","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1050001335657037440","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial 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