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We have investigated the applicability of water for the optical, electronic, and magnetic property modification of TMOs using three-terminal thin-film transistor (TFT) structure with\n                    <jats:italic>water-infiltrated nanoporous glass</jats:italic>\n                    of amorphous 12CaO · 7Al\n                    <jats:sub>2</jats:sub>\n                    O\n                    <jats:sub>3</jats:sub>\n                    as the gate insulator. In this paper, we review the electronic property modulation of TMOs using our developed TFT structure with water-infiltrated nanoporous glass and discuss the different operation mechanism using the examples of SrTiO\n                    <jats:sub>3</jats:sub>\n                    single crystal and VO\n                    <jats:sub>2</jats:sub>\n                    epitaxial film as the TMO channels. Electronic properties of the TMOs can be modulated in two ways depending on the magnitude relationship between the energy level of conduction band minimum (\n                    <jats:italic>E</jats:italic>\n                    <jats:sub>CBM</jats:sub>\n                    ) of TMOs and hydrogen generation potential (\n                    <jats:italic>E</jats:italic>\n                    <jats:sub>H2</jats:sub>\n                    ). When\n                    <jats:italic>E</jats:italic>\n                    <jats:sub>CBM</jats:sub>\n                    is higher than\n                    <jats:italic>E</jats:italic>\n                    <jats:sub>H2</jats:sub>\n                    in the case of SrTiO\n                    <jats:sub>3,</jats:sub>\n                    two-dimensional electron gas layer is formed at the TMO surface by the electrostatic charge accumulation and subsequent redox reaction. When\n                    <jats:italic>E</jats:italic>\n                    <jats:sub>CBM</jats:sub>\n                    is lower than\n                    <jats:italic>E</jats:italic>\n                    <jats:sub>H2</jats:sub>\n                    in the case of VO\n                    <jats:sub>2</jats:sub>\n                    , protonation driven metal–insulator conversion of TMOs occurs by the penetration of H\n                    <jats:sup>+</jats:sup>\n                    into the bulk region. The former approach may accelerate the development of nanostructures of high performance thermoelectric materials and the latter is applicable for the development of electrochromic device with non-volatile operation.\n                  </jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1420564276179889408","@type":"Researcher","personIdentifier":[{"@type":"KAKEN_RESEARCHERS","@value":"90648388"},{"@type":"NRID","@value":"1000090648388"},{"@type":"NRID","@value":"9000388519952"},{"@type":"NRID","@value":"9000401965110"},{"@type":"NRID","@value":"9000401910721"},{"@type":"NRID","@value":"9000279888189"},{"@type":"NRID","@value":"9000401978385"},{"@type":"NRID","@value":"9000326266925"},{"@type":"NRID","@value":"9000303992647"},{"@type":"NRID","@value":"9000388995735"},{"@type":"NRID","@value":"9000412526263"},{"@type":"NRID","@value":"9000412168811"},{"@type":"NRID","@value":"9000336757259"},{"@type":"NRID","@value":"9000398389797"},{"@type":"NRID","@value":"9000290134495"},{"@type":"NRID","@value":"9000016651933"},{"@type":"NRID","@value":"9000401994101"},{"@type":"NRID","@value":"9000326661561"},{"@type":"NRID","@value":"9000362200166"},{"@type":"NRID","@value":"9000360556007"},{"@type":"NRID","@value":"9000401565336"},{"@type":"NRID","@value":"9000405765239"},{"@type":"RESEARCHMAP","@value":"https://researchmap.jp/katase"}],"foaf:name":[{"@value":"Takayoshi Katase"}]},{"@id":"https://cir.nii.ac.jp/crid/1420001326235996928","@type":"Researcher","personIdentifier":[{"@type":"KAKEN_RESEARCHERS","@value":"80372530"},{"@type":"NRID","@value":"1000080372530"},{"@type":"NRID","@value":"9000022364509"},{"@type":"NRID","@value":"9000413564430"},{"@type":"NRID","@value":"9000411496321"},{"@type":"NRID","@value":"9000402913178"},{"@type":"NRID","@value":"9000415343346"},{"@type":"NRID","@value":"9000006575490"},{"@type":"NRID","@value":"9000239588943"},{"@type":"NRID","@value":"9000239588939"},{"@type":"NRID","@value":"9000022345897"},{"@type":"NRID","@value":"9000023732241"},{"@type":"NRID","@value":"9000414939050"},{"@type":"NRID","@value":"9000413946981"},{"@type":"NRID","@value":"9000397706949"},{"@type":"NRID","@value":"9000023711769"},{"@type":"NRID","@value":"9000411833771"},{"@type":"NRID","@value":"9000399947553"},{"@type":"NRID","@value":"9000412574210"},{"@type":"NRID","@value":"9000279888191"},{"@type":"NRID","@value":"9000381958731"},{"@type":"NRID","@value":"9000409024190"},{"@type":"NRID","@value":"9000389944836"},{"@type":"NRID","@value":"9000391875383"},{"@type":"NRID","@value":"9000401978386"},{"@type":"NRID","@value":"9000388461302"},{"@type":"NRID","@value":"9000107341968"},{"@type":"NRID","@value":"9000023712490"},{"@type":"NRID","@value":"9000414839122"},{"@type":"NRID","@value":"9000326266929"},{"@type":"NRID","@value":"9000022345991"},{"@type":"NRID","@value":"9000022396373"},{"@type":"NRID","@value":"9000413503662"},{"@type":"NRID","@value":"9000303992649"},{"@type":"NRID","@value":"9000403973953"},{"@type":"NRID","@value":"9000411032505"},{"@type":"NRID","@value":"9000023834235"},{"@type":"NRID","@value":"9000414242854"},{"@type":"NRID","@value":"9000411248883"},{"@type":"NRID","@value":"9000398389804"},{"@type":"NRID","@value":"9000411514339"},{"@type":"NRID","@value":"9000267846635"},{"@type":"NRID","@value":"9000239589139"},{"@type":"NRID","@value":"9000239589160"},{"@type":"NRID","@value":"9000239589147"},{"@type":"NRID","@value":"9000414843856"},{"@type":"NRID","@value":"9000412109983"},{"@type":"NRID","@value":"9000000040577"},{"@type":"NRID","@value":"9000412584090"},{"@type":"NRID","@value":"9000403973958"},{"@type":"NRID","@value":"9000277508634"},{"@type":"NRID","@value":"9000391846089"},{"@type":"NRID","@value":"9000401566079"},{"@type":"NRID","@value":"9000336757266"},{"@type":"NRID","@value":"9000398389799"},{"@type":"NRID","@value":"9000406302634"},{"@type":"NRID","@value":"9000290134497"},{"@type":"NRID","@value":"9000402046662"},{"@type":"NRID","@value":"9000024713155"},{"@type":"NRID","@value":"9000024409865"},{"@type":"NRID","@value":"9000388460437"},{"@type":"NRID","@value":"9000414953124"},{"@type":"NRID","@value":"9000239588922"},{"@type":"NRID","@value":"9000411519861"},{"@type":"NRID","@value":"9000409990894"},{"@type":"NRID","@value":"9000401994106"},{"@type":"NRID","@value":"9000258460541"},{"@type":"NRID","@value":"9000023749240"},{"@type":"NRID","@value":"9000326661565"},{"@type":"NRID","@value":"9000411077054"},{"@type":"NRID","@value":"9000362200167"},{"@type":"NRID","@value":"9000401980427"},{"@type":"NRID","@value":"9000381460736"},{"@type":"NRID","@value":"9000257847883"},{"@type":"NRID","@value":"9000023834805"},{"@type":"NRID","@value":"9000414725570"},{"@type":"NRID","@value":"9000413330921"},{"@type":"NRID","@value":"9000411999563"},{"@type":"NRID","@value":"9000360556009"},{"@type":"NRID","@value":"9000345325372"},{"@type":"NRID","@value":"9000401900644"},{"@type":"NRID","@value":"9000023732114"},{"@type":"NRID","@value":"9000409177056"},{"@type":"NRID","@value":"9000414521886"},{"@type":"RESEARCHMAP","@value":"https://researchmap.jp/read0132908"}],"foaf:name":[{"@value":"Hiromichi 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and comprehensive exploration of high performance thermoelectric semiconductor utilizing natural quantum structure of layered transition metal compound"}]},{"@id":"https://cir.nii.ac.jp/crid/1040282256931067392","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"17H01314"},{"@type":"JGN","@value":"JP17H01314"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17H01314/"}],"notation":[{"@language":"ja","@value":"熱電材料の高ZT化に向けたナノ周期平行平板構造の熱伝導率解明"},{"@language":"en","@value":"Thermal conductivity clarification of parallel plate structured material with nanometer sized period - Toward realization of high ZT thermoelectric materials -"}]}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050025031476538240","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device"},{"@value":"Highly 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