Wavelength stabilization of a semiconductor laser in high‐speed modulation using the Rb‐D<sub>2</sub> absorption line

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Published
1987-01
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  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1002/ecjb.4420700309
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Wiley

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<jats:title>Abstract</jats:title><jats:p>The wavelength stabilization of a semiconductor laser under high‐speed modulation is reported. The applied stabilization method uses the difference between an atomic absorption line and oscillation wavelength as a feedback signal. In this paper, this method was applied under high‐speed modulation. The broadening of the oscillation wavelength width by generated sidebands under high‐speed modulation distorts the feedback signal and degrades the stability. However, the wavelength stability (Allan variance) 10<jats:sup>−10</jats:sup> ∼ 10<jats:sup>−8</jats:sup> was obtained by using the Rb D<jats:sub>2</jats:sub> absorption line under the modulation frequence 50 to 200 MHz and the modulation current smaller than 1.6 mA<jats:sub>p‐p</jats:sub>.</jats:p>

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