{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361137044530449792.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1103/physrevb.56.6662"}},{"identifier":{"@type":"URI","@value":"http://link.aps.org/article/10.1103/PhysRevB.56.6662"}},{"identifier":{"@type":"URI","@value":"http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.6662/fulltext"}}],"dc:title":[{"@value":"<i>Ab initio</i>study of silicon in the<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mi>R</mml:mi><mml:mn>8</mml:mn><mml:mn/></mml:math>phase"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381137044530449665","@type":"Researcher","foaf:name":[{"@value":"Bernd G. Pfrommer"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137044530449793","@type":"Researcher","foaf:name":[{"@value":"Michel Co⁁té"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137044530449792","@type":"Researcher","foaf:name":[{"@value":"Steven G. Louie"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137044530449664","@type":"Researcher","foaf:name":[{"@value":"Marvin L. Cohen"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"01631829"},{"@type":"EISSN","@value":"10953795"}],"prism:publicationName":[{"@value":"Physical Review B"}],"dc:publisher":[{"@value":"American Physical Society (APS)"}],"prism:publicationDate":"1997-09-15","prism:volume":"56","prism:number":"11","prism:startingPage":"6662","prism:endingPage":"6668"},"reviewed":"false","dc:rights":["http://link.aps.org/licenses/aps-default-license"],"url":[{"@id":"http://link.aps.org/article/10.1103/PhysRevB.56.6662"},{"@id":"http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.6662/fulltext"}],"createdAt":"2002-07-26","modifiedAt":"2017-06-15","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050018218946620288","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Synthesis of submicron metastable phase of silicon using femtosecond laser-driven shock wave"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567183878301568","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Crystal and electronic structural changes during annealing in severely deformed Si containing metastable phases formed by high-pressure torsion"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848657002753920","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Potential energy surface trekking: Application to carbon at terapascal pressures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848659377248128","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Crystal structure searching by free energy surface trekking: application to carbon at 1 TPa"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001288148343296","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Severe Plastic Deformation of Semiconductor Materials Using High-Pressure Torsion"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1103/physrevb.56.6662"},{"@type":"CROSSREF","@value":"10.2320/matertrans.mf201907_references_DOI_DXpxnRYCAEiOLzqnkCmwwbFN6Qt"},{"@type":"CROSSREF","@value":"10.1063/1.3673591_references_DOI_DXpxnRYCAEiOLzqnkCmwwbFN6Qt"},{"@type":"CROSSREF","@value":"10.1063/1.5038160_references_DOI_DXpxnRYCAEiOLzqnkCmwwbFN6Qt"},{"@type":"CROSSREF","@value":"10.1088/1742-6596/500/16/162003_references_DOI_DXpxnRYCAEiOLzqnkCmwwbFN6Qt"},{"@type":"CROSSREF","@value":"10.1016/j.commatsci.2014.05.024_references_DOI_DXpxnRYCAEiOLzqnkCmwwbFN6Qt"}]}