{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361137045144633344.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1557/s1092578300000302"}},{"identifier":{"@type":"URI","@value":"https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1092578300000302"}}],"dc:title":[{"@value":"Wet Chemical Etching of AlN Single Crystals"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>Anisotropic chemical etching is an important means for characterizing the polarity and defect density of single crystals. In this letter, we present the results of our studies on the etching of bulk AlN crystals in aqueous potassium hydroxide solution. The nitrogen polarity (0001) basal plane initially etched rapidly, while the aluminum polarity basal plane, and prismatic (1<jats:graphic xmlns:xlink=\"http://www.w3.org/1999/xlink\" orientation=\"portrait\" mime-subtype=\"gif\" mimetype=\"image\" position=\"float\" xlink:type=\"simple\" xlink:href=\"S1092578300000302_eqn01\" />00) planes were not etched. The etch rate of the nitrogen polarity basal plane eventually decreased to zero, as the surface became completely covered with hexagonal hillocks which were bounded by {1<jats:graphic xmlns:xlink=\"http://www.w3.org/1999/xlink\" orientation=\"portrait\" mime-subtype=\"gif\" mimetype=\"image\" position=\"float\" xlink:type=\"simple\" xlink:href=\"S1092578300000302_eqn01\" />01} planes. The hillock density for the self-seeded AlN crystals studied was typically in the range of 5×10<jats:sup>7</jats:sup><jats:italic>cm</jats:italic><jats:sup>−2</jats:sup> to 10<jats:sup>9</jats:sup><jats:italic>cm</jats:italic><jats:sup>−2</jats:sup>. From our analysis of etched AlN crystals, we infer that freely nucleated crystals predominately have the nitrogen to aluminum direction pointing out from the nucleation surface, that is the ends of the AlN crystals facing the source are aluminum polarity.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381137045144633345","@type":"Researcher","foaf:name":[{"@value":"D. Zhuang"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137045144633344","@type":"Researcher","foaf:name":[{"@value":"J.H. Edgar"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137045144633218","@type":"Researcher","foaf:name":[{"@value":"Lianghong Liu"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137045144633217","@type":"Researcher","foaf:name":[{"@value":"B. Liu"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137045144633216","@type":"Researcher","foaf:name":[{"@value":"L. Walker"}]}],"publication":{"publicationIdentifier":[{"@type":"EISSN","@value":"10925783"}],"prism:publicationName":[{"@value":"MRS Internet Journal of Nitride Semiconductor Research"}],"dc:publisher":[{"@value":"Springer Science and Business Media LLC"}],"prism:publicationDate":"2002","prism:volume":"7","prism:startingPage":"4"},"reviewed":"false","dc:rights":["https://www.cambridge.org/core/terms"],"url":[{"@id":"https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1092578300000302"}],"createdAt":"2017-02-10","modifiedAt":"2021-02-24","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360002216003111168","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921810766208","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921830270720","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285707239171200","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681241453440","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Growth of Droplet-Free AlGaN Buffer Layer with +c Polarity by Molecular Beam Epitaxy"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1557/s1092578300000302"},{"@type":"CROSSREF","@value":"10.1143/apex.1.045003_references_DOI_TzoZNKctyLv9h8UwMTJ8pT28xa1"},{"@type":"CROSSREF","@value":"10.1143/jjap.46.l389_references_DOI_TzoZNKctyLv9h8UwMTJ8pT28xa1"},{"@type":"CROSSREF","@value":"10.1143/jjap.43.952_references_DOI_TzoZNKctyLv9h8UwMTJ8pT28xa1"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2010.04.008_references_DOI_TzoZNKctyLv9h8UwMTJ8pT28xa1"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2011.10.014_references_DOI_TzoZNKctyLv9h8UwMTJ8pT28xa1"}]}