{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361137045643398528.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1088/0022-3727/43/8/085203"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1088/0022-3727/43/8/085203"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1088/0022-3727/43/8/085203/pdf"}}],"dc:title":[{"@value":"Experimental study of plasma non-uniformities and the effect of phase-shift control in a very high frequency capacitive discharge"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>Plasma spatial non-uniformities were studied experimentally in a very high frequency (100 MHz) capacitive triode-type reactor used for etching of 300 mm wafers. It has been shown that in the traditional mode of operation there is considerable plasma non-uniformity due to the electromagnetic effects, namely at a low power, the plasma density profile is determined by the standing-wave effect, while at a high power the skin effect dominates. The influence of phase-shift control on plasma uniformity was examined. Phase-shift control means applying to the top and the bottom electrodes very high frequency voltages with a controlled phase shift between them. The experiments were carried out in process (C<jats:sub>4</jats:sub>F<jats:sub>8</jats:sub>/O<jats:sub>2</jats:sub>/Ar) plasma in a wide range of pressures and powers. It has been shown that the phase-shift control can considerably improve the plasma uniformity under a wide range of experimental conditions.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381137045643398530","@type":"Researcher","foaf:name":[{"@value":"Vladimir Volynets"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137045643398529","@type":"Researcher","foaf:name":[{"@value":"Dougyong Sung"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137045643398531","@type":"Researcher","foaf:name":[{"@value":"Dongwoo Kang"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137045643398528","@type":"Researcher","foaf:name":[{"@value":"Hansoo Shin"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00223727"},{"@type":"EISSN","@value":"13616463"},{"@type":"PISSN","@value":"http://id.crossref.org/issn/00223727"},{"@type":"PISSN","@value":"https://id.crossref.org/issn/00223727"}],"prism:publicationName":[{"@value":"Journal of Physics D: Applied Physics"}],"dc:publisher":[{"@value":"IOP Publishing"}],"prism:publicationDate":"2010-02-12","prism:volume":"43","prism:number":"8","prism:startingPage":"085203"},"reviewed":"false","dc:rights":["https://iopscience.iop.org/page/copyright","https://iopscience.iop.org/info/page/text-and-data-mining"],"url":[{"@id":"https://iopscience.iop.org/article/10.1088/0022-3727/43/8/085203"},{"@id":"https://iopscience.iop.org/article/10.1088/0022-3727/43/8/085203/pdf"}],"createdAt":"2010-02-12","modifiedAt":"2023-02-07","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360566399839276416","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871787241600","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874821541120","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"RF magnetized ring-shaped plasma for target utilization obtained with circular magnet monopole arrangement"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1088/0022-3727/43/8/085203"},{"@type":"CROSSREF","@value":"10.7567/jjap.51.08hd01_references_DOI_1NeMEJTEewDqT4triv8ukdlblw3"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.01aa05_references_DOI_1NeMEJTEewDqT4triv8ukdlblw3"},{"@type":"CROSSREF","@value":"10.1143/jjap.51.08hd01_references_DOI_1NeMEJTEewDqT4triv8ukdlblw3"}]}