{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361137046201034368.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1002/cvde.200506385"}},{"identifier":{"@type":"URI","@value":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fcvde.200506385"}},{"identifier":{"@type":"URI","@value":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/cvde.200506385"}}],"dc:title":[{"@value":"Remote AP‐PECVD of Silicon Dioxide Films from Hexamethyldisiloxane (HMDSO)"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>Abstract</jats:title><jats:p>In this paper we report on a study of an AP‐PECVD process based on a simple, and very inexpensive, dielectric barrier discharge using a standard mains supply frequency. We have investigated the effect of a range of deposition parameters on the properties of silicon oxide layers grown from a HMDSO/O<jats:sub>2</jats:sub>/Ar system. It is shown that the flux of energetic species from the discharge generation is a critical parameter in determining the growth rate and characteristics of the deposited films. Growth rates up to 10 nm min<jats:sup>–1</jats:sup> can be achieved and layer properties, such as refractive index and breakdown voltage, are comparable with those obtained by more conventional CVD processes. General optimum conditions for high growth rates and good quality films can be inferred from the results.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380861292194247169","@type":"Researcher","foaf:name":[{"@value":"S. E. Alexandrov"}]},{"@id":"https://cir.nii.ac.jp/crid/1381137046201034369","@type":"Researcher","foaf:name":[{"@value":"N. McSporran"}]},{"@id":"https://cir.nii.ac.jp/crid/1380861292194247168","@type":"Researcher","foaf:name":[{"@value":"M. L. Hitchman"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"09481907"},{"@type":"EISSN","@value":"15213862"}],"prism:publicationName":[{"@value":"Chemical Vapor Deposition"}],"dc:publisher":[{"@value":"Wiley"}],"prism:publicationDate":"2005-12","prism:volume":"11","prism:number":"11-12","prism:startingPage":"481","prism:endingPage":"490"},"reviewed":"false","dc:rights":["http://onlinelibrary.wiley.com/termsAndConditions#vor"],"url":[{"@id":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fcvde.200506385"},{"@id":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/cvde.200506385"}],"createdAt":"2005-12-12","modifiedAt":"2023-08-31","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449891158400","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Surface characterization of organosilicon films by low-temperature atmospheric-pressure plasma jet"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285706394650880","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Silicon Oxide Coatings with Very High Rates (>10 nm/s) by Hexamethyldisiloxane-Oxygen Fed Atmospheric-Pressure VHF Plasma: Film-Forming Behavior Using Cylindrical Rotary Electrode"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567182469769344","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Low-energy mass-selected ion beam production of fragments produced from hexamethyldisiloxane for the formation of silicon oxide film"}]},{"@id":"https://cir.nii.ac.jp/crid/1520572357877371520","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effects of deposition plasma power on properties of low dielectric-constant plasma polymer films deposited using hexamethyldisiloxane and 3,3-dimethyl-1-butene precursors"},{"@language":"ja-Kana","@value":"Effects of deposition plasma power on properties of low dielectric constant plasma polymer films deposited using hexamethyldisiloxane and 3 3 dimethyl 1 butene precursors"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1002/cvde.200506385"},{"@type":"CROSSREF","@value":"10.1007/s11090-012-9363-2_references_DOI_4hRl0avMSM1S58DCzNeG0LEgF3c"},{"@type":"CROSSREF","@value":"10.1143/jjap.48.106001_references_DOI_4hRl0avMSM1S58DCzNeG0LEgF3c"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.06he04_references_DOI_4hRl0avMSM1S58DCzNeG0LEgF3c"},{"@type":"CROSSREF","@value":"10.1016/j.surfcoat.2017.02.009_references_DOI_4hRl0avMSM1S58DCzNeG0LEgF3c"}]}