Local carrier distribution imaging on few-layer MoS2 exfoliated on SiO2 by scanning nonlinear dielectric microscopy

DOI PDF 4 Citations 55 References
  • Yasuo Cho
    Research Institute of Electrical Communication, Tohoku University , 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
  • Kohei Yamasue
    Research Institute of Electrical Communication, Tohoku University , 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

Bibliographic Information

Published
2018-06-11
Resource Type
journal article
DOI
  • 10.1063/1.5032277
Publisher
AIP Publishing

Search this article

Description

<jats:p>We demonstrate that scanning nonlinear dielectric microscopy (SNDM) can be used for the nanoscale characterization of dominant carrier distribution on atomically thin MoS2 mechanically exfoliated on SiO2. For stable imaging without damaging microscopy tips and samples, SNDM was combined with peak-force tapping mode atomic force microscopy. The identification of dominant carriers and their spatial distribution becomes possible even for single and few-layer MoS2 on SiO2 using the proposed method allowing differential capacitance (dC/dV) imaging. We can expect that SNDM can also be applied to the evaluation of other two-dimensional semiconductors and devices.</jats:p>

Journal

Citations (4)*help

See more

References(55)*help

See more

Related Projects

See more

Details 詳細情報について

Report a problem

Back to top