{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361418519015264256.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.1368374"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/78/18/2617/18557083/2617_1_online.pdf"}}],"dc:title":[{"@value":"Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>The exciton-localization effect and quantum-confine Stark effect (QCSE) on the performance of InGaN/GaN-based light-emitting diodes (LEDs) have been investigated with regard to indium mole fraction and well thickness by means of temperature-dependent and excitation-power-dependent photoluminescence measurements. The exciton-localization effect can be enhanced by increasing the indium mole fraction or increasing well thickness but up to 2.5 nm. The QCSE is monotonically enhanced with increasing indium concentration or well thickness. The output power of the LED can be increased by the enhanced exciton-localization effect; however, the QCSE has much stronger influence on the output power of LEDs than the exciton-localization effect, which should be taken into account for further improving the performance of InGaN/GaN-based LEDs.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381418519015264256","@type":"Researcher","foaf:name":[{"@value":"T. Wang"}],"jpcoar:affiliationName":[{"@value":"Satellite Venture Business Laboratory, Department of Electrical and Electronic Engineering, University of Tokushima, Minamijosanjima, Tokushima 770-8506, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418519015264259","@type":"Researcher","foaf:name":[{"@value":"J. Bai"}],"jpcoar:affiliationName":[{"@value":"Satellite Venture Business Laboratory, Department of Electrical and Electronic Engineering, University of Tokushima, Minamijosanjima, Tokushima 770-8506, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418519015264257","@type":"Researcher","foaf:name":[{"@value":"S. Sakai"}],"jpcoar:affiliationName":[{"@value":"Satellite Venture Business Laboratory, Department of Electrical and Electronic Engineering, University of Tokushima, Minamijosanjima, Tokushima 770-8506, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418519015264258","@type":"Researcher","foaf:name":[{"@value":"J. K. Ho"}],"jpcoar:affiliationName":[{"@value":"Opto-Electronics and Systems Laboratories, Industrial Technology Research Institute, T100, 195-8, Section 4, Chung Hsing Road, Chutung, Hsinchu, Taiwan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2001-04-30","prism:volume":"78","prism:number":"18","prism:startingPage":"2617","prism:endingPage":"2619"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/78/18/2617/18557083/2617_1_online.pdf"}],"createdAt":"2002-07-26","modifiedAt":"2024-02-03","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449882564352","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effects of three-dimensional strain distribution on the performance of GaN-based light-emitting diodes on patterned sapphire substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874812754560","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Raman spectroscopy of epitaxial InGaN/Si in the central composition range"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874814648576","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effects of thickness on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1520290884365443968","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Improved internal quantum efficiency of green emitting InGaN/GaN multiple quantum wells by in preflow for InGaN well growth"},{"@language":"ja-Kana","@value":"Improved internal quantum efficiency of green emitting InGaN GaN multiple quantum wells by in preflow for InGaN well growth"}]},{"@id":"https://cir.nii.ac.jp/crid/1520853833728174848","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Anomalous optical characteristics of carrier transfer process in quaternary AlInGaN multiple quantum well heterostructure"},{"@language":"ja-Kana","@value":"Anomalous optical characteristics of carrier transfer process in quaternary AlInGaN multiple quantum well heterostructure"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.1368374"},{"@type":"OPENAIRE","@value":"doi_dedup___::c116b55c710f9d38f070cbaa792816a7"},{"@type":"CROSSREF","@value":"10.1143/jjap.46.2558_references_DOI_VE9SFxqcdMbvKQwvL6C8Bxj0RYv"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0f1e_references_DOI_VE9SFxqcdMbvKQwvL6C8Bxj0RYv"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab09d6_references_DOI_VE9SFxqcdMbvKQwvL6C8Bxj0RYv"},{"@type":"CROSSREF","@value":"10.7567/apex.9.042101_references_DOI_VE9SFxqcdMbvKQwvL6C8Bxj0RYv"},{"@type":"CROSSREF","@value":"10.1143/jjap.47.839_references_DOI_VE9SFxqcdMbvKQwvL6C8Bxj0RYv"}]}