著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
M. Reyes and Y. Shishkin and S. Harvey and S. E. Saddow,Development of a high-growth rate 3C-SiC on Si CVD process,MRS Proceedings,0272-9172,Springer Science and Business Media LLC,2006,911,,,https://cir.nii.ac.jp/crid/1361418519256165248,https://doi.org/10.1557/proc-0911-b08-01