{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361418520108993792.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1109/ectc.2009.5074039"}},{"identifier":{"@type":"URI","@value":"http://xplorestaging.ieee.org/ielx5/5066986/5073977/05074039.pdf?arnumber=5074039"}}],"dc:title":[{"@value":"Three dimensional interconnects with high aspect ratio TSVs and fine pitch solder microbumps"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381418520108993798","@type":"Researcher","foaf:name":[{"@value":"Aibin Yu"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993797","@type":"Researcher","foaf:name":[{"@value":"John H. Lau"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993796","@type":"Researcher","foaf:name":[{"@value":"Soon Wee Ho"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993802","@type":"Researcher","foaf:name":[{"@value":"Aditya Kumar"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993805","@type":"Researcher","foaf:name":[{"@value":"Hnin Wai Yin"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993795","@type":"Researcher","foaf:name":[{"@value":"Jong Ming Ching"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993792","@type":"Researcher","foaf:name":[{"@value":"Vaidyanathan Kripesh"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993803","@type":"Researcher","foaf:name":[{"@value":"Damaruganath Pinjala"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993799","@type":"Researcher","foaf:name":[{"@value":"Scott Chen"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993800","@type":"Researcher","foaf:name":[{"@value":"Chien-Feng Chan"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993801","@type":"Researcher","foaf:name":[{"@value":"Chun-Chieh Chao"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993804","@type":"Researcher","foaf:name":[{"@value":"Chi-Hsin Chiu"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993793","@type":"Researcher","foaf:name":[{"@value":"Chih-Ming Huang"}]},{"@id":"https://cir.nii.ac.jp/crid/1381418520108993794","@type":"Researcher","foaf:name":[{"@value":"Carl Chen"}]}],"publication":{"prism:publicationName":[{"@value":"2009 59th Electronic Components and Technology Conference"}],"dc:publisher":[{"@value":"IEEE"}],"prism:publicationDate":"2009-05","prism:startingPage":"350","prism:endingPage":"354"},"reviewed":"false","url":[{"@id":"http://xplorestaging.ieee.org/ielx5/5066986/5073977/05074039.pdf?arnumber=5074039"}],"createdAt":"2009-06-17","modifiedAt":"2017-03-18","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360566399843838848","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Novel integration of ultrathin Al<sub>2</sub>O<sub>3</sub> with low-k dielectric as bilayer liner for capacitance optimization and stress mitigation in Cu through-silicon-via"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1109/ectc.2009.5074039"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.04ec08_references_DOI_S4wtt26ZCHfrCZjA24qigOUSLMS"}]}