Micro‐structural anisotropy of a‐plane GaN analyzed by high resolution X‐ray diffraction

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<jats:title>Abstract</jats:title><jats:p>Nonpolar a‐plane GaN films were grown on r‐plane sapphire by metal‐organic vapour phase epitaxy. Conventionally grown samples exhibit high dislocation densities, as basal stacking faults and partial dislocations. To reduce the defect density in‐situ SiN nanomasks were used. In high resolution X‐ray diffraction ω‐scans the full width of half maximum of the symmetric GaN (11‐20) reflection is azimuthally dependent on the in‐plane beam orientation. By measuring several higher order reflections the causes of broadening, the rotational disorder of the crystallites, and the coherent scattering length parallel to the in‐plane beam orientation are analyzed by a graphical separation known as Williamson‐Hall‐Plot. In addition the micro‐structural properties of the grown samples were investigated by transmission electron microscopy and cathodoluminescence. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>

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