著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Bo Yi and Xingbi Chen,A 300-V Ultra-Low-Specific On-Resistance High-Side p-LDMOS With Auto-Biased n-LDMOS for SPIC,IEEE Transactions on Power Electronics,0885-8993,Institute of Electrical and Electronics Engineers (IEEE),2017-01,32,1,551-560,https://cir.nii.ac.jp/crid/1361699993376897536,https://doi.org/10.1109/tpel.2016.2524024