{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361699993607306752.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.3674322"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.3674322/14107493/014505_1_online.pdf"}}],"dc:title":[{"@value":"Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>The preparation and electrical properties of Ti/Co Embedded (Co-E) ZrO2/Pt resistive switching memories are investigated. The Co nano-dots are formed in ZrO2 thin film after the memory device is annealed at 600 °C in N2 ambient for 60 s without any chemical reaction between Co and ZrO2, which is confirmed from the transmission electron microscopy, energy dispersive X-ray analyzer, and X-ray photoelectron spectroscopy observations. The devices exhibit low forming voltage of −1.5∼−2.8 V and robust negative bias unipolar resistive switching behaviors with small negative set voltage of −1.1∼−1.6 V. A physical model based on a filament mechanism is employed to explain the switching behaviors. It has a high potential for ultra high density nonvolatile memory applications.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381699993607306881","@type":"Researcher","foaf:name":[{"@value":"Ming-Chi Wu"}],"jpcoar:affiliationName":[{"@value":"National Chiao Tung University Department of Electronics Engineering and Institute of Electronics, , Hsinchu 300, Taiwan"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993607306880","@type":"Researcher","foaf:name":[{"@value":"Tsung-Han Wu"}],"jpcoar:affiliationName":[{"@value":"National Chiao Tung University Department of Electronics Engineering and Institute of Electronics, , Hsinchu 300, Taiwan"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993607306882","@type":"Researcher","foaf:name":[{"@value":"Tseung-Yuen Tseng"}],"jpcoar:affiliationName":[{"@value":"National Chiao Tung University Department of Electronics Engineering and Institute of Electronics, , Hsinchu 300, Taiwan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00218979"},{"@type":"EISSN","@value":"10897550"}],"prism:publicationName":[{"@value":"Journal of Applied Physics"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2012-01-01","prism:volume":"111","prism:number":"1","prism:startingPage":"014505"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.3674322/14107493/014505_1_online.pdf"}],"createdAt":"2012-01-06","modifiedAt":"2023-08-02","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449886435968","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Unipolar Resistive Switching in ZrO<sub>2</sub>Thin Films"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.3674322"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.041101_references_DOI_IjJEMAGTtrIzZINaJD010GMzPqN"}]}