{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361699993672430720.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1002/adfm.201101640"}},{"identifier":{"@type":"URI","@value":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadfm.201101640"}},{"identifier":{"@type":"URI","@value":"https://advanced.onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201101640"}}],"dc:title":[{"@value":"Structure and Morphology of PDI8‐CN2 for n‐Type Thin‐Film Transistors"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>Abstract</jats:title><jats:p>A multiscale investigation of <jats:italic>N</jats:italic>,<jats:italic>N</jats:italic>′‐bis(<jats:italic>n</jats:italic>‐octyl)‐<jats:italic>x</jats:italic>:<jats:italic>y</jats:italic>, dicyanoperylene‐3,4:9,10‐bis(dicarboximide), PDI8‐CN2, shows the same molecular arrangement in the bulk and in thin films sublimated on SiO<jats:sub>2</jats:sub>/Si wafers. Non‐conventional powder diffraction methods and theoretical calculations concur to provide a coherent picture of the crystalline structure. X‐ray diffraction (XRD) and atomic force microscopy (AFM) analyses of films of different thickness deposited at different substrate temperatures indicate the existence of two temperature‐dependent deposition regimes: a low‐temperature (room temperature) regime and a high‐temperature (80–120 °C) one, each characterized by different growth mechanisms. These mechanisms eventually result in different morphological and structural features of the films, which appear to be highly correlated with the trend of the electrical parameters that are measured in PDI8‐CN2‐based field‐effect transistors.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381699993672430724","@type":"Researcher","foaf:name":[{"@value":"Fabiola Liscio"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993672430721","@type":"Researcher","foaf:name":[{"@value":"Silvia Milita"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993672430720","@type":"Researcher","foaf:name":[{"@value":"Cristiano Albonetti"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993672430728","@type":"Researcher","foaf:name":[{"@value":"Pasquale D'Angelo"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993672430726","@type":"Researcher","foaf:name":[{"@value":"Antonietta Guagliardi"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993672430725","@type":"Researcher","foaf:name":[{"@value":"Norberto Masciocchi"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993672430722","@type":"Researcher","foaf:name":[{"@value":"Raffaele Guido Della Valle"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993672430727","@type":"Researcher","foaf:name":[{"@value":"Elisabetta Venuti"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993672430729","@type":"Researcher","foaf:name":[{"@value":"Aldo Brillante"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699993672430723","@type":"Researcher","foaf:name":[{"@value":"Fabio Biscarini"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"1616301X"},{"@type":"EISSN","@value":"16163028"}],"prism:publicationName":[{"@value":"Advanced Functional Materials"}],"dc:publisher":[{"@value":"Wiley"}],"prism:publicationDate":"2011-12-20","prism:volume":"22","prism:number":"5","prism:startingPage":"943","prism:endingPage":"953"},"reviewed":"false","dc:rights":["http://onlinelibrary.wiley.com/termsAndConditions#vor"],"url":[{"@id":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadfm.201101640"},{"@id":"https://advanced.onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201101640"}],"createdAt":"2011-12-20","modifiedAt":"2025-10-06","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360572092684615424","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Cooperative Aggregations of Nitrogen-Containing Perylene Diimides Driven by Rigid and Flexible Functional Groups"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848657346252032","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Low operating voltage organic transistors and circuits with anodic titanium oxide and phosphonic acid self-assembled monolayer dielectrics"}]},{"@id":"https://cir.nii.ac.jp/crid/2050870367085355904","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Regioselective functionalization of nitrogen-embedded perylene diimides for high-performance organic electron-transporting materials"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1002/adfm.201101640"},{"@type":"CROSSREF","@value":"10.1246/bcsj.20220051_references_DOI_8POmON5hFJIUOceniQYYpHE7D7N"},{"@type":"CROSSREF","@value":"10.1021/acs.chemmater.0c01888_references_DOI_8POmON5hFJIUOceniQYYpHE7D7N"},{"@type":"CROSSREF","@value":"10.1016/j.orgel.2016.10.034_references_DOI_8POmON5hFJIUOceniQYYpHE7D7N"}]}