著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
L. Beji and L. Sfaxi and B. Ismail and S. Zghal and F. Hassen and H. Maaref,Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution,Microelectronics Journal,0026-2692,Elsevier BV,2003-10,34,10,969-974,https://cir.nii.ac.jp/crid/1361699994047100544,https://doi.org/10.1016/s0026-2692(03)00183-6