{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361699994807730688.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1007/978-1-4419-7121-0"}},{"identifier":{"@type":"URI","@value":"https://link.springer.com/content/pdf/10.1007/978-1-4419-7121-0.pdf"}},{"identifier":{"@type":"URI","@value":"https://link.springer.com/content/pdf/10.1007/978-1-4419-7121-0"}}],"dc:title":[{"@value":"Silicon Carbide Microsystems for Harsh Environments"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381699994807730689","@type":"Researcher","foaf:name":[{"@value":"Muthu B.J. Wijesundara"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699994807730688","@type":"Researcher","foaf:name":[{"@value":"Robert Azevedo"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"19364407"},{"@type":"ISBN","@value":"9781441971203"},{"@type":"ISBN","@value":"9781441971210"}],"prism:publicationName":[{"@value":"MEMS Reference Shelf"}],"dc:publisher":[{"@value":"Springer New York"}],"prism:publicationDate":"2011","prism:startingPage":"15"},"reviewed":"false","dc:rights":["https://www.springernature.com/gp/researchers/text-and-data-mining","https://www.springernature.com/gp/researchers/text-and-data-mining"],"url":[{"@id":"https://link.springer.com/content/pdf/10.1007/978-1-4419-7121-0.pdf"},{"@id":"https://link.springer.com/content/pdf/10.1007/978-1-4419-7121-0"}],"createdAt":"2011-05-16","modifiedAt":"2024-05-03","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449890418048","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Room-temperature wafer bonding of SiC–Si by modified surface activated bonding with sputtered Si nanolayer"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399836888448","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874814733952","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"A comparison study: Direct wafer bonding of SiC–SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam"}]},{"@id":"https://cir.nii.ac.jp/crid/1390023936880404992","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Ion Irradiation Induced Microstructural Development of Polycrystalline Double-thick-walled Silicon Carbide Nanotubes"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1007/978-1-4419-7121-0"},{"@type":"CROSSREF","@value":"10.7567/apex.9.081302_references_DOI_JE7JYaJLLWJGiB9Hk480LfZbucU"},{"@type":"CROSSREF","@value":"10.7567/apex.10.036601_references_DOI_JE7JYaJLLWJGiB9Hk480LfZbucU"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.04ec09_references_DOI_JE7JYaJLLWJGiB9Hk480LfZbucU"},{"@type":"CROSSREF","@value":"10.1380/ejssnt.2025-040_references_DOI_JE7JYaJLLWJGiB9Hk480LfZbucU"}]}