{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361699995011729664.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/s0167-9317(03)00089-3"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0167931703000893?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0167931703000893?httpAccept=text/plain"}}],"dc:title":[{"@value":"Challenges, developments and applications of silicon deep reactive ion etching"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381699995011729665","@type":"Researcher","foaf:name":[{"@value":"F. Laermer"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995011729664","@type":"Researcher","foaf:name":[{"@value":"A. Urban"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"01679317"}],"prism:publicationName":[{"@value":"Microelectronic Engineering"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2003-06","prism:volume":"67-68","prism:startingPage":"349","prism:endingPage":"355"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0167931703000893?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S0167931703000893?httpAccept=text/plain"}],"createdAt":"2003-04-05","modifiedAt":"2023-04-25","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360002217451022592","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Foundations of low-temperature plasma enhanced materials synthesis and etching"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449883732864","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride"}]},{"@id":"https://cir.nii.ac.jp/crid/1360021389803032192","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Terahertz integration platforms using substrateless all-silicon microstructures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874821684608","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High-uniformity centimeter-wide Si etching method for MEMS devices with large opening elements"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204460117888","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"ja","@value":"ミニマルエッチング装置を用いたボッシュプロセスにおけるスキャロップの低減化"},{"@language":"en","@value":"Scallop Reduction in Bosch Process Using a Small Chamber and Rapid Gas Switching Rate"},{"@language":"ja-Kana","@value":"ミニマルエッチング ソウチ オ モチイタ ボッシュプロセス ニ オケル スキャロップ ノ テイゲンカ"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204646922240","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"An Image Display Using Piezoelectric MEMS Optical Scanner"},{"@language":"ja","@value":"圧電MEMS光スキャナによる画像ディスプレイ"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001277392383104","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Small Plasma Space with a Small Plasma Source and Its Advantage in Minimal Fab"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282679226862080","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Electromigration Behavior of through-Si-via (TSV) Interconnect for 3-D Flip Chip Packaging"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009408659113856","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures"},{"@language":"ja-Kana","@value":"Single Run Single Mask Inductively Coupled Plasma Reactive Ion Etching Process for Fabricating Suspended High Aspect Ratio Microstructures"}]},{"@id":"https://cir.nii.ac.jp/crid/1520572358564250752","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Fabrication of Parylene-Based High-Aspect-Ratio Suspended Structure Using a Silicon-on-Insulator Wafer"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/s0167-9317(03)00089-3"},{"@type":"CROSSREF","@value":"10.1088/1361-6595/aaa86c_references_DOI_ZBWfh6cJyRsLrtaVqzHD6PUiXvp"},{"@type":"CROSSREF","@value":"10.1143/jjap.45.305_references_DOI_ZBWfh6cJyRsLrtaVqzHD6PUiXvp"},{"@type":"CROSSREF","@value":"10.1063/5.0158350_references_DOI_2jSNEvNdnVgpPfItite2PgyzHsQ"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.036501_references_DOI_ZBWfh6cJyRsLrtaVqzHD6PUiXvp"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.04fc03_references_DOI_ZBWfh6cJyRsLrtaVqzHD6PUiXvp"},{"@type":"CROSSREF","@value":"10.7567/apex.11.091001_references_DOI_ZBWfh6cJyRsLrtaVqzHD6PUiXvp"},{"@type":"CROSSREF","@value":"10.2184/lsj.36.183_references_DOI_ZBWfh6cJyRsLrtaVqzHD6PUiXvp"},{"@type":"CROSSREF","@value":"10.2320/matertrans.m2009367_references_DOI_ZBWfh6cJyRsLrtaVqzHD6PUiXvp"},{"@type":"CROSSREF","@value":"10.1541/ieejsmas.136.499_references_DOI_ZBWfh6cJyRsLrtaVqzHD6PUiXvp"},{"@type":"CROSSREF","@value":"10.2494/photopolymer.32.747_references_DOI_ZBWfh6cJyRsLrtaVqzHD6PUiXvp"}]}