{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361699995437671936.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1002/adfm.201505455"}},{"identifier":{"@type":"URI","@value":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadfm.201505455"}},{"identifier":{"@type":"URI","@value":"https://advanced.onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201505455"}}],"dc:title":[{"@value":"Amorphous Boron Nitride: A Universal, Ultrathin Dielectric For 2D Nanoelectronics"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>Next‐generation nanoelectronics based on 2D materials ideally will require reliable, flexible, transparent, and versatile dielectrics for transistor gate barriers, environmental passivation layers, capacitor spacers, and other device elements. Ultrathin amorphous boron nitride of thicknesses from 2 to 17 nm, described in this work, may offer these attributes, as the material is demonstrated to be universal in structure and stoichiometric chemistry on numerous substrates including flexible polydimethylsiloxane, amorphous silicon dioxide, crystalline Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, other 2D materials including graphene, 2D MoS<jats:sub>2</jats:sub>, and conducting metals and metal foils. The versatile, large area pulsed laser deposition growth technique is performed at temperatures less than 200 °C and without modifying processing conditions, allowing for seamless integration into 2D device architectures. A device‐scale dielectric constant of 5.9 ± 0.65 at 1 kHz, breakdown voltage of 9.8 ± 1.0 MV cm<jats:sup>−1</jats:sup>, and bandgap of 4.5 eV were measured for various thicknesses of the ultrathin <jats:italic>a</jats:italic>‐BN material, representing values higher than previously reported chemical vapor deposited <jats:italic>h</jats:italic>‐BN and nearing single crystal <jats:italic>h</jats:italic>‐BN.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381699995437671938","@type":"Researcher","foaf:name":[{"@value":"Nicholas R. Glavin"}],"jpcoar:affiliationName":[{"@value":"Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB  OH 45433 USA"},{"@value":"School of Mechanical Engineering and Birck Nanotechnology Center Purdue University  West Lafayette IN 47907 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671936","@type":"Researcher","foaf:name":[{"@value":"Christopher Muratore"}],"jpcoar:affiliationName":[{"@value":"University of Dayton  Dayton OH 45409 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671948","@type":"Researcher","foaf:name":[{"@value":"Michael L. Jespersen"}],"jpcoar:affiliationName":[{"@value":"Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB  OH 45433 USA"},{"@value":"University of Dayton Research Laboratory  Dayton OH 45409 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671947","@type":"Researcher","foaf:name":[{"@value":"Jianjun Hu"}],"jpcoar:affiliationName":[{"@value":"Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB  OH 45433 USA"},{"@value":"University of Dayton Research Laboratory  Dayton OH 45409 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671937","@type":"Researcher","foaf:name":[{"@value":"Phillip T. Hagerty"}],"jpcoar:affiliationName":[{"@value":"Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB  OH 45433 USA"},{"@value":"University of Dayton Research Laboratory  Dayton OH 45409 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671944","@type":"Researcher","foaf:name":[{"@value":"Al M. Hilton"}],"jpcoar:affiliationName":[{"@value":"Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB  OH 45433 USA"},{"@value":"Wyle Laboratories  Dayton OH 43433 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671943","@type":"Researcher","foaf:name":[{"@value":"Austin T. Blake"}],"jpcoar:affiliationName":[{"@value":"Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB  OH 45433 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671946","@type":"Researcher","foaf:name":[{"@value":"Christopher A. Grabowski"}],"jpcoar:affiliationName":[{"@value":"Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB  OH 45433 USA"},{"@value":"UES Inc.  Dayton OH 45432 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671939","@type":"Researcher","foaf:name":[{"@value":"Michael F. Durstock"}],"jpcoar:affiliationName":[{"@value":"Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB  OH 45433 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671940","@type":"Researcher","foaf:name":[{"@value":"Michael E. McConney"}],"jpcoar:affiliationName":[{"@value":"Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB  OH 45433 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671941","@type":"Researcher","foaf:name":[{"@value":"Drew M. Hilgefort"}],"jpcoar:affiliationName":[{"@value":"Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB  OH 45433 USA"},{"@value":"University of Dayton Research Laboratory  Dayton OH 45409 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671945","@type":"Researcher","foaf:name":[{"@value":"Timothy S. Fisher"}],"jpcoar:affiliationName":[{"@value":"School of Mechanical Engineering and Birck Nanotechnology Center Purdue University  West Lafayette IN 47907 USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995437671942","@type":"Researcher","foaf:name":[{"@value":"Andrey A. Voevodin"}],"jpcoar:affiliationName":[{"@value":"Materials Science and Engineering University of North Texas  Denton TX 76203 USA"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"1616301X"},{"@type":"EISSN","@value":"16163028"}],"prism:publicationName":[{"@value":"Advanced Functional Materials"}],"dc:publisher":[{"@value":"Wiley"}],"prism:publicationDate":"2016-03-21","prism:volume":"26","prism:number":"16","prism:startingPage":"2640","prism:endingPage":"2647"},"reviewed":"false","dc:rights":["http://onlinelibrary.wiley.com/termsAndConditions#vor"],"url":[{"@id":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadfm.201505455"},{"@id":"https://advanced.onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201505455"}],"createdAt":"2016-03-21","modifiedAt":"2025-10-06","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360283691590529408","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1002/adfm.201505455"},{"@type":"CROSSREF","@value":"10.1021/acsami.6b06425_references_DOI_OeLLq2kRZIqnukur2tNpEe9f9Kp"}]}