{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361699995482677760.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.1338492"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/78/9/1225/18556062/1225_1_online.pdf"}}],"dc:title":[{"@value":"Effect of hydrogen on the photoluminescence of Si nanocrystals embedded in a SiO2 matrix"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>Hydrogen passivation of Si nanocrystals is shown to result in a redshift of photoluminescence (PL) emission spectra, as well as the more commonly observed intensity increase. The shift is reversible, with spectra returning to their unpassivated values as hydrogen is removed from the samples by annealing. The magnitude of the redshift also depends on the implant fluence employed for nanocrystal synthesis, increasing with increasing fluence or particle size. These data are shown to be consistent with a model in which larger crystallites are assumed to contain a greater number of nonradiative defects, i.e., the number of nonradiative defects is assumed to scale with the surface area or volume of a nanocrystal. Hydrogen passivation then results in a disproportionate increase in emission from larger crystallites, giving rise to an apparent redshift in the composite PL emission spectrum.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381699995482677760","@type":"Researcher","foaf:name":[{"@value":"S. Cheylan"}],"jpcoar:affiliationName":[{"@value":"Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia"}]},{"@id":"https://cir.nii.ac.jp/crid/1381699995482677761","@type":"Researcher","foaf:name":[{"@value":"R. G. Elliman"}],"jpcoar:affiliationName":[{"@value":"Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2001-02-26","prism:volume":"78","prism:number":"9","prism:startingPage":"1225","prism:endingPage":"1227"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/78/9/1225/18556062/1225_1_online.pdf"}],"createdAt":"2002-07-26","modifiedAt":"2024-02-03","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449890422272","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Experimental study on interface region of two-dimensional Si layers by forming gas annealing"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399839860608","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Interface Nature of Ordered Thermally Oxidized Si Nanowires Probed by Electron Spin Resonance: Post Fabrication Annealing and Irradiation"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567183087720192","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Atom Probe Tomography Analysis of Boron and/or Phosphorus Distribution in Doped Silicon Nanocrystals"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.1338492"},{"@type":"CROSSREF","@value":"10.1021/acs.jpcc.6b06197_references_DOI_45rjrKUwADTfZbmJdOKpkhpiARo"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.041301_references_DOI_45rjrKUwADTfZbmJdOKpkhpiARo"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.04ed04_references_DOI_45rjrKUwADTfZbmJdOKpkhpiARo"}]}