{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361981469327115264.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.2234720"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2234720/13159786/042506_1_online.pdf"}},{"identifier":{"@type":"DOI","@value":"10.48550/arxiv.cond-mat/0606503"}}],"dc:title":[{"@value":"Giant tunnel magnetoresistance and high annealing stability in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with synthetic pinned layer"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We investigated the relationship between tunnel magnetoresistance (TMR) ratio and the crystallization of CoFeB layers through annealing in magnetic tunnel junctions (MTJs) with MgO barriers that had CoFe∕Ru∕CoFeB synthetic ferrimagnet pinned layers with varying Ru spacer thickness (tRu). The TMR ratio increased with increasing annealing temperature (Ta) and tRu, reaching 361% at Ta=425°C, whereas the TMR ratio of the MTJs with pinned layers without Ru spacers decreased at Ta over 325°C. Ruthenium spacers play an important role in forming a (001)-oriented bcc CoFeB pinned layer, resulting in a high TMR ratio through annealing at high temperatures.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381981469327115268","@type":"Researcher","foaf:name":[{"@value":"Y. M. Lee"}],"jpcoar:affiliationName":[{"@value":"Tohoku University Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981469327115267","@type":"Researcher","foaf:name":[{"@value":"J. Hayakawa"}],"jpcoar:affiliationName":[{"@value":"Hitachi, Ltd. , Advanced Research Laboratory, 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan and Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"},{"@value":"Tohoku University , Advanced Research Laboratory, 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan and Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981469327115266","@type":"Researcher","foaf:name":[{"@value":"S. Ikeda"}],"jpcoar:affiliationName":[{"@value":"Tohoku University Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981469327115264","@type":"Researcher","foaf:name":[{"@value":"F. Matsukura"}],"jpcoar:affiliationName":[{"@value":"Tohoku University Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981469327115265","@type":"Researcher","foaf:name":[{"@value":"H. Ohno"}],"jpcoar:affiliationName":[{"@value":"Tohoku University Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2006-07-24","prism:volume":"89","prism:number":"4","prism:startingPage":"042506"},"reviewed":"false","dcterms:accessRights":"http://purl.org/coar/access_right/c_abf2","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2234720/13159786/042506_1_online.pdf"}],"createdAt":"2006-07-27","modifiedAt":"2023-08-05","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=Condensed%20Matter%20-%20Other%20Condensed%20Matter","dc:title":"Condensed Matter - Other Condensed Matter"},{"@id":"https://cir.nii.ac.jp/all?q=Condensed%20Matter%20-%20Materials%20Science","dc:title":"Condensed Matter - Materials Science"},{"@id":"https://cir.nii.ac.jp/all?q=Materials%20Science%20(cond-mat.mtrl-sci)","dc:title":"Materials Science (cond-mat.mtrl-sci)"},{"@id":"https://cir.nii.ac.jp/all?q=FOS:%20Physical%20sciences","dc:title":"FOS: Physical sciences"},{"@id":"https://cir.nii.ac.jp/all?q=Other%20Condensed%20Matter%20(cond-mat.other)","dc:title":"Other Condensed Matter (cond-mat.other)"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360002221359125504","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Detection of Sub-Nano-Tesla Magnetic Field by Integrated Magnetic Tunnel Junctions with Bottom Synthetic Antiferro-Coupled Free Layer"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449889905152","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Study 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