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Switching the fracture toughness of single-crystal ZnS using light irradiation
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- Tingting Zhu
- Department of Materials and Earth Sciences, Technical University of Darmstadt 1 , 64287 Darmstadt, Germany
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- Kuan Ding
- Department of Materials and Earth Sciences, Technical University of Darmstadt 1 , 64287 Darmstadt, Germany
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- Yu Oshima
- Department of Materials Physics, Nagoya University 2 , Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
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- Anahid Amiri
- Department of Materials and Earth Sciences, Technical University of Darmstadt 1 , 64287 Darmstadt, Germany
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- Enrico Bruder
- Department of Materials and Earth Sciences, Technical University of Darmstadt 1 , 64287 Darmstadt, Germany
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- Robert W. Stark
- Department of Materials and Earth Sciences, Technical University of Darmstadt 1 , 64287 Darmstadt, Germany
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- Karsten Durst
- Department of Materials and Earth Sciences, Technical University of Darmstadt 1 , 64287 Darmstadt, Germany
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- Katsuyuki Matsunaga
- Department of Materials Physics, Nagoya University 2 , Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
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- Atsutomo Nakamura
- Department of Materials Physics, Nagoya University 2 , Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
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- Xufei Fang
- Department of Materials and Earth Sciences, Technical University of Darmstadt 1 , 64287 Darmstadt, Germany
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Description
<jats:p>An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ∼45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation.</jats:p>
Journal
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- Applied Physics Letters
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Applied Physics Letters 118 (15), 154103-, 2021-04-12
AIP Publishing
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Details 詳細情報について
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- CRID
- 1361981469983649536
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- ISSN
- 10773118
- 00036951
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- Article Type
- journal article
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- Data Source
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- Crossref
- KAKEN
- OpenAIRE
