{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361981470108769920.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.2240736"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2240736/13161043/042112_1_online.pdf"}}],"dc:title":[{"@value":"Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>Excellent surface passivation of c-Si has been achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13cm∕s on low resistivity n- and p-type c-Si, respectively. These results obtained for ∼30nm thick Al2O3 films are comparable to state-of-the-art results when employing thermal oxide as used in record-efficiency c-Si solar cells. A 7nm thin Al2O3 film still yields an effective surface recombination velocity of 5cm∕s on n-type silicon.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381981470108770048","@type":"Researcher","foaf:name":[{"@value":"B. Hoex"}],"jpcoar:affiliationName":[{"@value":"Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981470108770049","@type":"Researcher","foaf:name":[{"@value":"S. B. S. Heil"}],"jpcoar:affiliationName":[{"@value":"Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981470108769920","@type":"Researcher","foaf:name":[{"@value":"E. Langereis"}],"jpcoar:affiliationName":[{"@value":"Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981470108769921","@type":"Researcher","foaf:name":[{"@value":"M. C. M. van de Sanden"}],"jpcoar:affiliationName":[{"@value":"Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981470108770050","@type":"Researcher","foaf:name":[{"@value":"W. M. M. Kessels"}],"jpcoar:affiliationName":[{"@value":"Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2006-07-24","prism:volume":"89","prism:number":"4","prism:startingPage":"042112"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2240736/13161043/042112_1_online.pdf"}],"createdAt":"2006-07-27","modifiedAt":"2023-08-05","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050001338855459200","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Rapid progression and subsequent saturation of polarization-type potential-induced degradation of n-type front-emitter crystalline-silicon photovoltaic 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