{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1361981471044094720.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/j.apsusc.2010.07.073"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0169433210010159?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0169433210010159?httpAccept=text/plain"}}],"dc:title":[{"@value":"Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(111)"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1381981471044094724","@type":"Researcher","foaf:name":[{"@value":"Jijun Xiong"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981471044094721","@type":"Researcher","foaf:name":[{"@value":"Jianjun Tang"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981471044094722","@type":"Researcher","foaf:name":[{"@value":"Ting Liang"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981471044094720","@type":"Researcher","foaf:name":[{"@value":"Yong Wang"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981471044094723","@type":"Researcher","foaf:name":[{"@value":"Chenyang Xue"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981471044094725","@type":"Researcher","foaf:name":[{"@value":"Weili Shi"}]},{"@id":"https://cir.nii.ac.jp/crid/1381981471044094726","@type":"Researcher","foaf:name":[{"@value":"Wendong Zhang"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"01694332"}],"prism:publicationName":[{"@value":"Applied Surface Science"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2010-12","prism:volume":"257","prism:number":"4","prism:startingPage":"1161","prism:endingPage":"1165"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0169433210010159?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S0169433210010159?httpAccept=text/plain"}],"createdAt":"2010-08-22","modifiedAt":"2019-06-02","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449882529280","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874817643264","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of Stress Mitigating Layers on the Structural Properties of GaN Grown by Ammonia Molecular Beam Epitaxy on 100 mm Si(111)"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/j.apsusc.2010.07.073"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab06b4_references_DOI_Hl63A1QKZsy99apjAy81LO5Zhi0"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.08je05_references_DOI_Hl63A1QKZsy99apjAy81LO5Zhi0"}]}