{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362262944526137472.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/s0925-9635(01)00415-0"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0925963501004150?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0925963501004150?httpAccept=text/plain"}}],"dc:title":[{"@value":"Growth of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition"}],"description":[{"notation":[{"@value":"Abstract   Nanocrystalline diamond (NCD) films were grown using biased enhanced growth (BEG) in microwave plasma chemical vapor deposition on mirror polished silicon substrates at temperatures in the range from 400 to 700°C. The films were characterized by Raman spectroscopy, X-ray diffraction (XRD), Auger electron spectroscopy and atomic force microscopy (AFM). Hardness of the films was measured by nano-indentor. Apart from graphitic D and G bands in the films, the Raman spectra exhibit NCD features near 1140 cm−1. The relative intensity of the NCD to graphitic G band in the Raman spectra of the films is negligible in the films grown at 400°C. It increases with temperature and attains a maximum at 600°C following a sharp decrease in the films grown at higher temperatures. XRD results also indicate a maximum concentration of NCD in the film grown at 600°C. Average hardness of the films increases with temperature from ∼5 GPa to ∼40 GPa up to 600°C followed by a decrease (∼24 GPa) in the film grown at 700°C. Substrate temperature seems to play a crucial role in the growth of NCD in BEG processes. An increase in growth temperature may be responsible for evolving bonded hydrogen and increasing mobility of carbon atoms. Both factors help in developing NCD in the films grown at 500 and 600°C with a combination of subplantation mechanism, due to biasing, and a high concentration of H atoms in the gas-phase, typical of CVD diamond process. At 700°C the implanted carbon atoms may be migrating back to the surface resulting in domination of surface processes in the growth, which in turn should result in increase in graphitic content of the films at such a high methane concentration and continuous biasing used in the present study."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382262944526137474","@type":"Researcher","foaf:name":[{"@value":"T. Sharda"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944526137472","@type":"Researcher","foaf:name":[{"@value":"T. Soga"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944526137473","@type":"Researcher","foaf:name":[{"@value":"T. Jimbo"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944526137475","@type":"Researcher","foaf:name":[{"@value":"M. Umeno"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"09259635"}],"prism:publicationName":[{"@value":"Diamond and Related Materials"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2001-09","prism:volume":"10","prism:number":"9-10","prism:startingPage":"1592","prism:endingPage":"1596"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0925963501004150?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S0925963501004150?httpAccept=text/plain"}],"createdAt":"2002-07-25","modifiedAt":"2019-04-20","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050019512842674944","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Near- and far-field Raman spectroscopic studies of nanodiamond composite films deposited by coaxial arc plasma"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921811398144","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Chemical Precursor for the Synthesis of Diamond Films at Low Temperature"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204118470784","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"The Adhesive Ability of Diamond Films Deposited on Mirror Polished Co Cemented Tungsten Carbide"},{"@language":"ja","@value":"鏡面研磨した超硬合金上に成膜したダイヤモンド薄膜の密着性"},{"@language":"ja-Kana","@value":"キョウメン ケンマ シタ チョウコウゴウキン ジョウ ニ セイマク シタ ダイヤモンド ハクマク ノ ミッチャクセイ"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001205417886336","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Deposition of Nanocrystalline Diamond Films on Pure Ti by CH4/H2 Microwave Plasma CVD"},{"@language":"ja","@value":"メタン／水素マイクロ波プラズマＣＶＤ法による純チタン基板上のナノダイヤモンド成膜"},{"@language":"ja-Kana","@value":"メタン スイソ マイクロハ プラズマ CVDホウ ニ ヨル ジュンチタン キバン ジョウ ノ ナノダイヤモンドセイマク"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/s0925-9635(01)00415-0"},{"@type":"OPENAIRE","@value":"doi_dedup___::81e9c7949ec7609d0743da7680f38f29"},{"@type":"CROSSREF","@value":"10.2472/jsms.54.73_references_DOI_TwA1BbrQqfuxstEkUAxo6fAAlrR"},{"@type":"CROSSREF","@value":"10.1143/apex.3.045501_references_DOI_TwA1BbrQqfuxstEkUAxo6fAAlrR"},{"@type":"CROSSREF","@value":"10.1063/1.5142198_references_DOI_TwA1BbrQqfuxstEkUAxo6fAAlrR"},{"@type":"CROSSREF","@value":"10.4139/sfj.61.829_references_DOI_TwA1BbrQqfuxstEkUAxo6fAAlrR"}]}