{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362262944550889472.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1116/1.4931785"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/avs/jva/article-pdf/doi/10.1116/1.4931785/16141985/061307_1_online.pdf"}}],"dc:title":[{"@value":"Characterization of CO2 plasma ashing for less low-dielectric-constant film damage"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>The mechanism of CO2 plasma ashing process was evaluated. CO2 plasma is a good candidate for the ashing process for photoresists because it generates a lot of CO2 ions. These ions can ash equivalent amounts of carbon film with less low-k damage than can oxygen radicals. A high ratio of CO2 ions to oxygen radicals in CO2 plasma can make the ashing process efficient with less low-k damage. The ratio can be controlled by changing the CO2 flow rate, chamber pressure, and radio frequency (RF). When a lower RF frequency of 2 MHz as a plasma generator was used, the authors reduced sidewall low-k damage in patterned structures. CO2 ions can perform anisotropic ashing because the velocity distribution of CO2 ions is directional due to acceleration with a plasma sheath.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382262944550889472","@type":"Researcher","foaf:name":[{"@value":"Yoshio Susa"}],"jpcoar:affiliationName":[{"@value":"Tokyo Electron America, Inc. , 2400 Grove Blvd., Austin, Texas 78741"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944550889473","@type":"Researcher","foaf:name":[{"@value":"Hiroto Ohtake"}],"jpcoar:affiliationName":[{"@value":"Tokyo Electron America, Inc. , 20175 NW Amberglen Court, Suite 140, Beaverton, Oregon 97006"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944550889600","@type":"Researcher","foaf:name":[{"@value":"Zhao Jianping"}],"jpcoar:affiliationName":[{"@value":"Tokyo Electron America, Inc. , 2400 Grove Blvd., Austin, Texas 78741"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944550889475","@type":"Researcher","foaf:name":[{"@value":"Lee Chen"}],"jpcoar:affiliationName":[{"@value":"Tokyo Electron America, Inc. , 2400 Grove Blvd., Austin, Texas 78741"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944550889474","@type":"Researcher","foaf:name":[{"@value":"Toshihisa Nozawa"}],"jpcoar:affiliationName":[{"@value":"Tokyo Electron Technology Center of Sendai , 1 Techno-hills, Taiwa-cho, Kurokawa-gun, Miyagi 981-3629, Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"07342101"},{"@type":"EISSN","@value":"15208559"}],"prism:publicationName":[{"@value":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films"}],"dc:publisher":[{"@value":"American Vacuum Society"}],"prism:publicationDate":"2015-09-24","prism:volume":"33","prism:number":"6"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/avs/jva/article-pdf/doi/10.1116/1.4931785/16141985/061307_1_online.pdf"}],"createdAt":"2015-09-24","modifiedAt":"2023-06-28","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449890701056","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"SiN etching characteristics of Ar/CH<sub>3</sub>F/O<sub>2</sub> plasma and dependence on SiN film density"}]},{"@id":"https://cir.nii.ac.jp/crid/1361131414748954880","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects"}]},{"@id":"https://cir.nii.ac.jp/crid/1390571638811015808","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Temporal Variations of Optical Emission Spectra in Microwave-Excited Plasma in Saturated Water Vapor under Reduced Pressure during Photoresist Removal"}]},{"@id":"https://cir.nii.ac.jp/crid/1390853113785043968","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Improved Uniformity of Photoresist Ashing for a Half-Inch Wafer with Double U-shaped Antenna Structure in a Microwave-Excited Water Vapor Plasma"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1116/1.4931785"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.086502_references_DOI_UmEUYs6k3yqVptFu9UIvAuOvSil"},{"@type":"CROSSREF","@value":"10.2494/photopolymer.34.479_references_DOI_UmEUYs6k3yqVptFu9UIvAuOvSil"},{"@type":"CROSSREF","@value":"10.2494/photopolymer.34.469_references_DOI_UmEUYs6k3yqVptFu9UIvAuOvSil"},{"@type":"CROSSREF","@value":"10.1002/ppap.201900039_references_DOI_UmEUYs6k3yqVptFu9UIvAuOvSil"}]}