{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362262944597298944.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1149/1.2095638"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1149/1.2095638"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1149/1.2095638/pdf"}}],"dc:title":[{"@value":"Three‐Dimensional Flow Effects in Silicon CVD in Horizontal Reactors"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382262944597298944","@type":"Researcher","foaf:name":[{"@value":"H. K. Moffat"}],"jpcoar:affiliationName":[{"@value":"Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944597298945","@type":"Researcher","foaf:name":[{"@value":"K. F. Jensen"}],"jpcoar:affiliationName":[{"@value":"Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00134651"},{"@type":"EISSN","@value":"19457111"},{"@type":"PISSN","@value":"http://id.crossref.org/issn/00134651"}],"prism:publicationName":[{"@value":"Journal of The Electrochemical Society"}],"dc:publisher":[{"@value":"The Electrochemical Society"}],"prism:publicationDate":"1988-02-01","prism:volume":"135","prism:number":"2","prism:startingPage":"459","prism:endingPage":"471"},"reviewed":"false","dc:rights":["https://iopscience.iop.org/page/copyright","https://iopscience.iop.org/info/page/text-and-data-mining"],"url":[{"@id":"https://iopscience.iop.org/article/10.1149/1.2095638"},{"@id":"https://iopscience.iop.org/article/10.1149/1.2095638/pdf"}],"createdAt":"2006-06-14","modifiedAt":"2020-09-07","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1390001204246185088","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"CVD Process Simulation for TiN, Mo Film Growth Rate Distributions"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204247106048","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Simulation of Growth Rate Variation of CVD-Mo Film along Axial Direction in Horizontal Tubular Reactor"},{"@language":"ja-Kana","@value":"Simulation of Growth Rate Variation of"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206246865152","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Numerical Evaluation of Silicon-Thin Film Growth from SiHCl3-H2 Gas Mixture in a Horizontal Chemical Vapor Deposition Reactor."},{"@value":"Numerical Evaluation of Silicon-Thin Film Growth from SiHCl<sub>3</sub>-H<sub>2</sub>  Gas Mixture   in a Horizontal Chemical Vapor Deposition Reactor"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206252749184","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data."}]},{"@id":"https://cir.nii.ac.jp/crid/1390282679542885120","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"A theoretical study of the temperature field in a pancake CVD reactor."}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1149/1.2095638"},{"@type":"CROSSREF","@value":"10.1252/jcej.25.692_references_DOI_AfbW8xgpKBmCSqCR5ZoeHafN2m1"},{"@type":"CROSSREF","@value":"10.2320/matertrans1989.38.299_references_DOI_AfbW8xgpKBmCSqCR5ZoeHafN2m1"},{"@type":"CROSSREF","@value":"10.1143/jjap.39.1642_references_DOI_AfbW8xgpKBmCSqCR5ZoeHafN2m1"},{"@type":"CROSSREF","@value":"10.1143/jjap.33.1977_references_DOI_AfbW8xgpKBmCSqCR5ZoeHafN2m1"},{"@type":"CROSSREF","@value":"10.2320/matertrans1989.40.1323_references_DOI_AfbW8xgpKBmCSqCR5ZoeHafN2m1"}]}