{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362262944659980672.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1103/physrevb.60.8849"}},{"identifier":{"@type":"URI","@value":"http://link.aps.org/article/10.1103/PhysRevB.60.8849"}},{"identifier":{"@type":"URI","@value":"http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.8849/fulltext"}}],"dc:title":[{"@value":"Effects of macroscopic polarization in III-V nitride multiple quantum wells"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382262944659980672","@type":"Researcher","foaf:name":[{"@value":"Vincenzo Fiorentini"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944659980673","@type":"Researcher","foaf:name":[{"@value":"Fabio Bernardini"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944659980674","@type":"Researcher","foaf:name":[{"@value":"Fabio Della Sala"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944659980675","@type":"Researcher","foaf:name":[{"@value":"Aldo Di Carlo"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944659980676","@type":"Researcher","foaf:name":[{"@value":"Paolo Lugli"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"01631829"},{"@type":"EISSN","@value":"10953795"}],"prism:publicationName":[{"@value":"Physical Review B"}],"dc:publisher":[{"@value":"American Physical Society (APS)"}],"prism:publicationDate":"1999-09-15","prism:volume":"60","prism:number":"12","prism:startingPage":"8849","prism:endingPage":"8858"},"reviewed":"false","dc:rights":["http://link.aps.org/licenses/aps-default-license"],"url":[{"@id":"http://link.aps.org/article/10.1103/PhysRevB.60.8849"},{"@id":"http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.8849/fulltext"}],"createdAt":"2002-07-27","modifiedAt":"2017-12-10","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449882509312","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Optical properties of\n                    <i>c</i>\n                    -Plane InGaN/GaN single quantum wells as a function of total electric field strength"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449882647040","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Can we always control the thickness layer in the MBE method with atomic precision? Analysis of the problem on the MQWs GaN/AlN example"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449883761024","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\\bar{1}0)$ <i>m</i>-plane GaN substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449885542656","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449890506624","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Growth of non-polar a-plane AlN on r-plane sapphire"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004230280273024","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effects of Ga Supply on the Growth of (11‐22) AlN on <i>m</i>‐Plane (10‐10) Sapphire Substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1360021391875196160","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859332992","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Controlled crystal orientations of semipolar AlN grown on an\n                    <i>m</i>\n                    -plane sapphire by MOCVD"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924860950144","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Polarization modulation in GaN-based double-barrier resonant tunneling diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285705259724032","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Structural and electrical properties of semipolar (11‐22) AlGaN grown on <i>m</i>‐plane (1‐100) sapphire substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1360294643849695104","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Strain Engineering to Release Trapped Hole Carriers in p-Type Haeckelite GaN"}]},{"@id":"https://cir.nii.ac.jp/crid/1360298757193242112","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396788132608","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399836340224","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High pressure studies of radiative recombination processes in nitride semiconductor alloys and quantum structures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399840931584","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of Supply Direction of Precursors on a-Plane GaN Low Angle Incidence Microchannel Epitaxy by Ammonia-Based Metal–Organic Molecular Beam Epitaxy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567182215944448","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360588380138644992","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874821209600","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Experimental and first-principles studies of high-pressure effects on the structural, electronic, and optical properties of semiconductors and lanthanide doped solids"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848658856066944","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Impact of thermal treatment on the growth of semipolar AlN on <i>m</i>-plane sapphire"}]},{"@id":"https://cir.nii.ac.jp/crid/1360857593713027840","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204648603648","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"ja","@value":"半極性（ 1122 ）面上InGaN量子井戸の光学特性と緑色レーザー実現の可能性"},{"@language":"en","@value":"Optical Properties of Semipolar ( 1122 ) InGaN Quantum Wells and the Prospects of Green LDs"},{"@value":"Laser Review 半極性(1122)面上InGaN量子井戸の光学特性と緑色レーザー実現の可能性"},{"@language":"ja-Kana","@value":"Laser Review ハンキョクセイ 1122 メン ジョウ InGaN リョウシ イド ノ コウガク トクセイ ト リョクショク レーザー ジツゲン ノ カノウセイ"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282679583976320","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Growth of Semipolar InN on r-plane (10-12) Sapphire by RF-MBE"},{"@language":"ja","@value":"ＲＦ－ＭＢＥ法によるｒ面（１０－１２）Ｓａｐｐｈｉｒｅ基板上半極性面ＩｎＮの結晶成長"},{"@language":"ja-Kana","@value":"RF MBEホウ ニ ヨル rメン 10 12 Sapphire キバン ジョウ ハンキョクセイメン InN ノ ケッショウ セイチョウ"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009407192654592","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Excitation-density dependence of photoluminescence from Si-doped AlGaN/AlGaN multiple quantum wells at low temperature"},{"@language":"ja-Kana","@value":"Excitation density dependence of photoluminescence from Si doped AlGaN AlGaN multiple quantum wells at low temperature"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009408903027584","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Investigation on photoluminescence blue shift of InGaN/GaN quantum wells induced by surface band bending"},{"@language":"ja-Kana","@value":"Investigation on photoluminescence blue shift of InGaN GaN quantum wells induced by surface band bending"}]},{"@id":"https://cir.nii.ac.jp/crid/1520573330846680832","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells"},{"@language":"ja-Kana","@value":"Experimental and theoretical considerations of polarization field direction in semipolar InGaN GaN quantum wells"}]},{"@id":"https://cir.nii.ac.jp/crid/1520853832865722368","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1103/physrevb.60.8849"},{"@type":"CROSSREF","@value":"10.1002/pssb.201700418_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1143/jjap.51.030207_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0f1c_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.2184/lsj.38.255_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1109/access.2023.3349275_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1143/apex.3.071001_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1021/acsaelm.1c00765_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/acc4fd_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1143/apex.3.061002_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.08je04_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1143/jjap.46.4079_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab10c2_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.7567/apex.7.095201_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1541/ieejeiss.129.1974_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.3390/nano14100873_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1063/1.5052294_references_DOI_VIjexlsVHbdes8Cz9DFyt8qTvxs"},{"@type":"CROSSREF","@value":"10.1143/jjap.47.47_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0407_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab4868_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.7567/apex.11.111003_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.7567/jjap.51.030207_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.05fa02_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.05fa02_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1364/ome.445043_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1002/pssc.201600248_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2012.11.001_references_DOI_Q9WPHsruHGGJCPNumKRSp3NxZkP"}]}