{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362262944764994432.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.2735930"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2735930/8847627/181919_1_online.pdf"}}],"dc:title":[{"@value":"Intersubband absorption with different sublevel couplings in [(CdS∕ZnSe∕BeTe)∕(ZnSe∕BeTe)] double quantum wells"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>The authors demonstrated the strong sublevel coupling on the intersubband absorption at telecommunication wavelengths in asymmetric II-VI double quantum wells consisting of a deep CdS well and a shallow ZnSe well coupled by a 1-monolayer-thick BeTe barrier. With increasing ZnSe well thickness, the sublevel coupling between excited states first increases to a maximum and then decreases, which results in a transition energy anticrossing and a reverse intensity evolution for e1-e2 and e1-e3 transitions. These results are in good agreement with the self-consistent Schrödinger-Poisson calculation. For optical switch applications, the sublevel-coupling-dependent relaxation time could be increased to lower the switching energy.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382262944764994436","@type":"Researcher","foaf:name":[{"@value":"G. W. Cong"}],"jpcoar:affiliationName":[{"@value":"National Institute of Advanced Industrial Science and Technology (AIST) Ultrafast Photonic Devices Laboratory, , AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944764994434","@type":"Researcher","foaf:name":[{"@value":"R. Akimoto"}],"jpcoar:affiliationName":[{"@value":"National Institute of Advanced Industrial Science and Technology (AIST) Ultrafast Photonic Devices Laboratory, , AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944764994435","@type":"Researcher","foaf:name":[{"@value":"K. Akita"}],"jpcoar:affiliationName":[{"@value":"National Institute of Advanced Industrial Science and Technology (AIST) Ultrafast Photonic Devices Laboratory, , AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944764994432","@type":"Researcher","foaf:name":[{"@value":"T. Hasama"}],"jpcoar:affiliationName":[{"@value":"National Institute of Advanced Industrial Science and Technology (AIST) Ultrafast Photonic Devices Laboratory, , AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262944764994433","@type":"Researcher","foaf:name":[{"@value":"H. Ishikawa"}],"jpcoar:affiliationName":[{"@value":"National Institute of Advanced Industrial Science and Technology (AIST) Ultrafast Photonic Devices Laboratory, , AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2007-04-30","prism:volume":"90","prism:number":"18","prism:startingPage":"181919"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2735930/8847627/181919_1_online.pdf"}],"createdAt":"2007-05-03","modifiedAt":"2023-07-03","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1520853833609116288","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Saturation characteristics simulation of intersubband absorption for 〔(CdS/ZnSe/BeTe)/(ZnSe/BeTe)〕 coupled quantum wells"},{"@language":"ja-Kana","@value":"Saturation characteristics simulation of intersubband absorption for CdS ZnSe BeTe ZnSe BeTe coupled quantum wells"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.2735930"},{"@type":"CROSSREF","@value":"10.1143/jjap.47.2932_references_DOI_5EikUKOmsFU2QJVYYpSsIUr0YIP"}]}