1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+

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  • Minoru Fujii
    Division of Science of Materials, The Graduate School of Science and Technology, Kobe University, Rokkodai, Nada, Kobe 657, Japan
  • Yoshihiko Kanzawa
    Division of Science of Materials, The Graduate School of Science and Technology, Kobe University, Rokkodai, Nada, Kobe 657, Japan
  • Keiichi Yamamoto
    Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657, Japan
  • Masato Yoshida
    Division of Science of Materials, The Graduate School of Science and Technology, Kobe University, Rokkodai, Nada, Kobe 657, Japan
  • Shinji Hayashi
    Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657, Japan

Bibliographic Information

Published
1997-09-01
DOI
  • 10.1063/1.119624
Publisher
AIP Publishing

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<jats:p>SiO 2 films containing Si nanocrystals (nc-Si) and Er were prepared and their photoluminescence (PL) properties were studied. The samples exhibited luminescence peaks at 0.81 and 1.54 μm, which could be assigned to the electron-hole recombination in nc-Si and the intra-4f transition in Er3+, respectively. Correlation between the intensities of the two luminescence peaks was studied as functions of Er concentration and excitation power. The present results clearly demonstrate that excitation of Er3+ occurs through the recombination of photogenerated carriers spatially confined in nc-Si and the subsequent energy transfer to Er3+.</jats:p>

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