{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362262946239328512.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.4733679"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4733679/13167150/023901_1_online.pdf"}}],"dc:title":[{"@value":"Electronic effect of Na on Cu(In,Ga)Se2 solar cells"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We report the effect of Na on the electronic properties of Cu(In,Ga)Se2 (CIGS) thin-film solar cells with a structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/SiOx/soda-lime glass (SLG). The diffusion of Na from the SLG into the CIGS layer was systematically controlled by varying the thickness of SiOx. As the Na content increased, the hole concentration of CIGS was enhanced, while the band-gap was nearly constant, which led to a lower Fermi level in the CIGS towards its valence-band edge. The Na-induced increment in the built-in potential (Vbi) across the n-(ITO/i-ZnO/CdS)/p-CIGS junction yielded an increment of open-circuit voltage that well agreed with the calculated Vbi.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382262946239328514","@type":"Researcher","foaf:name":[{"@value":"Dae-Hyung Cho"}],"jpcoar:affiliationName":[{"@value":"Electronics and Telecommunications Research Institute 1 , 218 Gajeongno, Yuseong-gu, Daejeon 305-700, South Korea"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262946239328517","@type":"Researcher","foaf:name":[{"@value":"Kyu-Seok Lee"}],"jpcoar:affiliationName":[{"@value":"Electronics and Telecommunications Research Institute 1 , 218 Gajeongno, Yuseong-gu, Daejeon 305-700, South Korea"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262946239328513","@type":"Researcher","foaf:name":[{"@value":"Yong-Duck Chung"}],"jpcoar:affiliationName":[{"@value":"Electronics and Telecommunications Research Institute 1 , 218 Gajeongno, Yuseong-gu, Daejeon 305-700, South Korea"},{"@value":"University of Science and Technology 2 , 217 Gajeongno, Yuseong-gu, Daejeon 305-350, South Korea"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262946239328516","@type":"Researcher","foaf:name":[{"@value":"Ju-Hee Kim"}],"jpcoar:affiliationName":[{"@value":"Electronics and Telecommunications Research Institute 1 , 218 Gajeongno, Yuseong-gu, Daejeon 305-700, South Korea"},{"@value":"University of Science and Technology 2 , 217 Gajeongno, Yuseong-gu, Daejeon 305-350, South Korea"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262946239328515","@type":"Researcher","foaf:name":[{"@value":"Soo-Jeong Park"}],"jpcoar:affiliationName":[{"@value":"Electronics and Telecommunications Research Institute 1 , 218 Gajeongno, Yuseong-gu, Daejeon 305-700, South Korea"},{"@value":"University of Science and Technology 2 , 217 Gajeongno, Yuseong-gu, Daejeon 305-350, South Korea"}]},{"@id":"https://cir.nii.ac.jp/crid/1382262946239328512","@type":"Researcher","foaf:name":[{"@value":"Jeha Kim"}],"jpcoar:affiliationName":[{"@value":"Research Institute of Photovoltaics, Cheongju University 3 , Cheongju 360-764, South Korea"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2012-07-09","prism:volume":"101","prism:number":"2"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4733679/13167150/023901_1_online.pdf"}],"createdAt":"2012-07-09","modifiedAt":"2023-06-23","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360004236312078976","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Review—Light Emission from Thin Film Solar Cell Materials: An Emerging Infrared and Visible Light Emitter"}]},{"@id":"https://cir.nii.ac.jp/crid/1360298757184377728","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Impacts of KF Post-Deposition Treatment on the Band Alignment of Epitaxial Cu(In,Ga)Se<sub>2</sub> Heterojunctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874819526784","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Photoluminescence characterization of surface degradation mechanism in Cu(In,Ga)Se<sub>2</sub>thin films grown on Mo/soda lime glass substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874819872256","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Electrical characterization of Cu(In,Ga)Se<sub>2</sub>thin films peeled off from Mo-coated soda-lime glass substrate by AC Hall measurement"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.4733679"},{"@type":"CROSSREF","@value":"10.1149/2.0151801jss_references_DOI_7zHSXAvCBsTRLbKx19ZbP6cibnD"},{"@type":"CROSSREF","@value":"10.1021/acsami.1c21193_references_DOI_7zHSXAvCBsTRLbKx19ZbP6cibnD"},{"@type":"CROSSREF","@value":"10.7567/jjap.53.05fw11_references_DOI_7zHSXAvCBsTRLbKx19ZbP6cibnD"},{"@type":"CROSSREF","@value":"10.7567/jjap.54.018001_references_DOI_7zHSXAvCBsTRLbKx19ZbP6cibnD"}]}