著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
S. Ohba and M. Nakai and H. Ando and S. Hanamura and S. Shimda and K. Satoh and K. Takahashi and M. Kubo and T. Fujita,MOS Area Sensor: Part II - Low-Noise MOS Area Sensor with Antiblooming Photodiodes,IEEE Journal of Solid-State Circuits,0018-9200,Institute of Electrical and Electronics Engineers (IEEE),1980-08,15,4,747-752,https://cir.nii.ac.jp/crid/1362544419377056896,https://doi.org/10.1109/jssc.1980.1051464