{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362825893333553792.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1109/lpt.2011.2177654"}},{"identifier":{"@type":"URI","@value":"http://xplorestaging.ieee.org/ielx5/68/6133462/06092445.pdf?arnumber=6092445"}}],"dc:title":[{"@value":"GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382825893333553798","@type":"Researcher","foaf:name":[{"@value":"Cheng-Hsiung Yen"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893333553795","@type":"Researcher","foaf:name":[{"@value":"Wei-Chih Lai"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893333553796","@type":"Researcher","foaf:name":[{"@value":"Ya-Yu Yang"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893333553792","@type":"Researcher","foaf:name":[{"@value":"Chun-Kai Wang"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893333553797","@type":"Researcher","foaf:name":[{"@value":"Tsun-Kai Ko"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893333553794","@type":"Researcher","foaf:name":[{"@value":"Schang-Jing Hon"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893333553793","@type":"Researcher","foaf:name":[{"@value":"Shoou-Jinn Chang"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"10411135"},{"@type":"EISSN","@value":"19410174"}],"prism:publicationName":[{"@value":"IEEE Photonics Technology Letters"}],"dc:publisher":[{"@value":"Institute of Electrical and Electronics Engineers (IEEE)"}],"prism:publicationDate":"2012-02","prism:volume":"24","prism:number":"4","prism:startingPage":"294","prism:endingPage":"296"},"reviewed":"false","dc:rights":["https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html"],"url":[{"@id":"http://xplorestaging.ieee.org/ielx5/68/6133462/06092445.pdf?arnumber=6092445"}],"createdAt":"2011-12-02","modifiedAt":"2021-10-10","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449882542592","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Improvement of emission efficiency with a sputtered AlN buffer layer in GaInN-based green light-emitting diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449884552448","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449886216448","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Low Dislocation Densities of Nitride-Based Light-Emitting Diodes with a Preflow of NH<sub>3</sub>Source before Growth of AlN Buffer Layer"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399844762752","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848657192973312","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1109/lpt.2011.2177654"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.01ag07_references_DOI_9MGgC4qHjPT3FA3L9kKs0CLb8I"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab079f_references_DOI_9MGgC4qHjPT3FA3L9kKs0CLb8I"},{"@type":"CROSSREF","@value":"10.7567/apex.9.055503_references_DOI_9MGgC4qHjPT3FA3L9kKs0CLb8I"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.111001_references_DOI_9MGgC4qHjPT3FA3L9kKs0CLb8I"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2017.10.018_references_DOI_9MGgC4qHjPT3FA3L9kKs0CLb8I"}]}