Characteristics of rare-earth element erbium implanted in silicon

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  • Y. S. Tang
    Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom
  • K. C. Heasman
    Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom
  • W. P. Gillin
    Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom
  • B. J. Sealy
    Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom

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<jats:p>Rare-earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related to the weakly crystal field split spin-orbit levels 4I13/2→4I15/2 of Er 3+ (4f 11) at different lattice sites having different symmetries were observed.</jats:p>

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