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- T. Zhang
- Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom
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- S. K. Clowes
- Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom
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- M. Debnath
- Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom
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- A. Bennett
- Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom
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- C. Roberts
- Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom
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- J. J. Harris
- Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom
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- R. A. Stradling
- Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom
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- L. F. Cohen
- Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom
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- T. Lyford
- PANalytical Research Centre, Sussex Innovation Centre, Brighton, BN1 9SB United Kingdom
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- P. F. Fewster
- PANalytical Research Centre, Sussex Innovation Centre, Brighton, BN1 9SB United Kingdom
書誌事項
- 公開日
- 2004-05-31
- DOI
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- 10.1063/1.1748850
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers (60–300 nm) epitaxially grown on GaAs(100) substrates by reducing the density of dislocations within the interfacial layer. The epilayer properties are well described by a differential two-layer model. This model confirms that the contribution of the interface can only be donor-like. Moreover, the electrical properties of the InSb layers change continuously away from the interface up to sample thickness of the order of 1 μm.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 84 (22), 4463-4465, 2004-05-31
AIP Publishing
