{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362825893508712192.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.1748850"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/84/22/4463/18589452/4463_1_online.pdf"}}],"dc:title":[{"@value":"High-mobility thin InSb films grown by molecular beam epitaxy"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers (60–300 nm) epitaxially grown on GaAs(100) substrates by reducing the density of dislocations within the interfacial layer. The epilayer properties are well described by a differential two-layer model. This model confirms that the contribution of the interface can only be donor-like. Moreover, the electrical properties of the InSb layers change continuously away from the interface up to sample thickness of the order of 1 μm.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382825893508712192","@type":"Researcher","foaf:name":[{"@value":"T. Zhang"}],"jpcoar:affiliationName":[{"@value":"Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893508712201","@type":"Researcher","foaf:name":[{"@value":"S. K. Clowes"}],"jpcoar:affiliationName":[{"@value":"Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893508712200","@type":"Researcher","foaf:name":[{"@value":"M. Debnath"}],"jpcoar:affiliationName":[{"@value":"Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893508712194","@type":"Researcher","foaf:name":[{"@value":"A. Bennett"}],"jpcoar:affiliationName":[{"@value":"Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893508712196","@type":"Researcher","foaf:name":[{"@value":"C. Roberts"}],"jpcoar:affiliationName":[{"@value":"Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893508712193","@type":"Researcher","foaf:name":[{"@value":"J. J. Harris"}],"jpcoar:affiliationName":[{"@value":"Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893508712195","@type":"Researcher","foaf:name":[{"@value":"R. A. Stradling"}],"jpcoar:affiliationName":[{"@value":"Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893508712198","@type":"Researcher","foaf:name":[{"@value":"L. F. Cohen"}],"jpcoar:affiliationName":[{"@value":"Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BW United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893508712197","@type":"Researcher","foaf:name":[{"@value":"T. Lyford"}],"jpcoar:affiliationName":[{"@value":"PANalytical Research Centre, Sussex Innovation Centre, Brighton, BN1 9SB United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893508712199","@type":"Researcher","foaf:name":[{"@value":"P. F. Fewster"}],"jpcoar:affiliationName":[{"@value":"PANalytical Research Centre, Sussex Innovation Centre, Brighton, BN1 9SB United Kingdom"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2004-05-31","prism:volume":"84","prism:number":"22","prism:startingPage":"4463","prism:endingPage":"4465"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/84/22/4463/18589452/4463_1_online.pdf"}],"createdAt":"2004-05-14","modifiedAt":"2024-02-04","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050582154146354176","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers"}]},{"@id":"https://cir.nii.ac.jp/crid/1050585658875631872","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Femtosecond laser–assisted thermal annealing of Ni electrode on SiC substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003446856159232","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effects of Deposition Conditions of First InSb Layer on Electrical Properties of n-Type InSb Films Grown With Two-Step Growth Method via InSb Bilayer"}]},{"@id":"https://cir.nii.ac.jp/crid/1360861707398057472","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Heteroepitaxial growth of InSb thin film on SrTiO\n                    <sub>3</sub>\n                    (001) by pulsed laser deposition for magnetic Hall sensor application"}]},{"@id":"https://cir.nii.ac.jp/crid/1520853832777549824","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Thin InSb films on GaAs substrates by molecular beam epitaxy"},{"@language":"ja-Kana","@value":"Thin InSb films on GaAs substrates by molecular beam epitaxy"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.1748850"},{"@type":"CROSSREF","@value":"10.7567/jjap.50.04dh13_references_DOI_UORimNjPdz2CkvwHXzYNvZzUtbG"},{"@type":"CROSSREF","@value":"10.1143/jjap.47.558_references_DOI_UORimNjPdz2CkvwHXzYNvZzUtbG"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/ad2032_references_DOI_UORimNjPdz2CkvwHXzYNvZzUtbG"},{"@type":"CROSSREF","@value":"10.1143/jjap.50.04dh13_references_DOI_UORimNjPdz2CkvwHXzYNvZzUtbG"},{"@type":"CROSSREF","@value":"10.1063/1.5036804_references_DOI_UORimNjPdz2CkvwHXzYNvZzUtbG"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/ac7bf3_references_DOI_UORimNjPdz2CkvwHXzYNvZzUtbG"}]}