著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Keiko Fujihira and Yoichiro Tarui and Kenichi Ohtsuka and Masayuki Imaizumi and Tetsuya Takami,Effects of N<sub>2</sub>O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability,Materials Science Forum,1662-9752,"Trans Tech Publications, Ltd.",2005-05-15,483-485,,697-700,https://cir.nii.ac.jp/crid/1362825893674020864,https://doi.org/10.4028/www.scientific.net/msf.483-485.697