{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362825893674020864.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.4028/www.scientific.net/msf.483-485.697"}},{"identifier":{"@type":"URI","@value":"https://www.scientific.net/MSF.483-485.697.pdf"}}],"dc:title":[{"@value":"Effects of N<sub>2</sub>O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel\nMOSFET has been systematically investigated. It is found that the mobility increases with increasing anneal temperature from 900 to 1150°C. The highest field effect mobility of 30 cm2/Vs is achieved by 1150°C anneal for 3 h, which is about 20 times higher than that for non-annealed MOSFET. In order to investigate the oxide reliability, TDDB measurement has been performed on SiO2 grown on n-type\n4H-SiC. The oxide lifetime is found to be drastically improved by N2O anneal.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382825893674020864","@type":"Researcher","foaf:name":[{"@value":"Keiko Fujihira"}],"jpcoar:affiliationName":[{"@value":"Mitsubishi Electric Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893674020868","@type":"Researcher","foaf:name":[{"@value":"Yoichiro Tarui"}],"jpcoar:affiliationName":[{"@value":"Mitsubishi Electric Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893674020865","@type":"Researcher","foaf:name":[{"@value":"Kenichi Ohtsuka"}],"jpcoar:affiliationName":[{"@value":"Mitsubishi Electric Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893674020866","@type":"Researcher","foaf:name":[{"@value":"Masayuki Imaizumi"}],"jpcoar:affiliationName":[{"@value":"Mitsubishi Electric Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825893674020867","@type":"Researcher","foaf:name":[{"@value":"Tetsuya Takami"}],"jpcoar:affiliationName":[{"@value":"Mitsubishi Electric Corporation"}]}],"publication":{"publicationIdentifier":[{"@type":"EISSN","@value":"16629752"}],"prism:publicationName":[{"@value":"Materials Science Forum"}],"dc:publisher":[{"@value":"Trans Tech Publications, Ltd."}],"prism:publicationDate":"2005-05-15","prism:volume":"483-485","prism:startingPage":"697","prism:endingPage":"700"},"reviewed":"false","dc:rights":["https://www.scientific.net/PolicyAndEthics/PublishingPolicies","https://www.scientific.net/license/TDM_Licenser.pdf"],"url":[{"@id":"https://www.scientific.net/MSF.483-485.697.pdf"}],"createdAt":"2009-03-11","modifiedAt":"2025-09-03","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360284924867187712","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.4028/www.scientific.net/msf.483-485.697"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.04er11_references_DOI_MrA9vADjt0VeKbQL6dwHqCFgI81"}]}