著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Junichi Kashiwagi and Tetsuya Fujiwara and Minoru Akutsu and Norikazu Ito and Kentaro Chikamatsu and Ken Nakahara,Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation,IEEE Electron Device Letters,0741-3106,Institute of Electrical and Electronics Engineers (IEEE),2013-09,34,9,1109-1111,https://cir.nii.ac.jp/crid/1362825893685927936,https://doi.org/10.1109/led.2013.2272491