著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
A. Le Gouil and O. Joubert and G. Cunge and T. Chevolleau and L. Vallier and B. Chenevier and I. Matko,Poly-Si∕TiN∕HfO2 gate stack etching in high-density plasmas,"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena",1071-1023,American Vacuum Society,2007-04-27,25,3,767-778,https://cir.nii.ac.jp/crid/1362825893698711040,https://doi.org/10.1116/1.2732736