著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
B. Hoex and J. Schmidt and P. Pohl and M. C. M. van de Sanden and W. M. M. Kessels,Silicon surface passivation by atomic layer deposited Al2O3,Journal of Applied Physics,0021-8979,AIP Publishing,2008-08-15,104,4,044903,https://cir.nii.ac.jp/crid/1362825894096984832,https://doi.org/10.1063/1.2963707