{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362825894777090944.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.1688979"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/84/12/2136/18587126/2136_1_online.pdf"}}],"dc:title":[{"@value":"Electron-doped infinite-layer thin films with TC over 40 K grown on DyScO3 substrates"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We report high-quality electron-doped infinite-layer superconducting thin films with a TC of over 40 K grown on lattice-matched DyScO3 substrates by molecular-beam epitaxy. The optimally doped film seems to be free from strain, thus leading to a low resistivity of 75 μΩ cm at room temperature and 15 μΩ cm just above TC.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382825894777090944","@type":"Researcher","foaf:name":[{"@value":"Shin-ichi Karimoto"}],"jpcoar:affiliationName":[{"@value":"NTT Basic Research Laboratories, NTT Corporation, 3-1 Wakamiya, Morinosato, Atsugi-shi, Kanagawa 243-0198, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825894777090945","@type":"Researcher","foaf:name":[{"@value":"Michio Naito"}],"jpcoar:affiliationName":[{"@value":"NTT Basic Research Laboratories, NTT Corporation, 3-1 Wakamiya, Morinosato, Atsugi-shi, Kanagawa 243-0198, Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2004-03-22","prism:volume":"84","prism:number":"12","prism:startingPage":"2136","prism:endingPage":"2138"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/84/12/2136/18587126/2136_1_online.pdf"}],"createdAt":"2004-03-12","modifiedAt":"2024-02-04","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360566399837908864","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Controlled superconductivity in infinite-layer Sr<sub>0.875</sub>La<sub>0.125</sub>CuO<sub>2</sub> films sputter-deposited on Ba<sub>y</sub>Sr<sub>1−</sub>\n                  <sub>y</sub>TiO<sub>3</sub> buffer layers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360576118710641408","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Magnetotransport of thin film Sr\n                    <sub>\n                      1−\n                      <i>x</i>\n                    </sub>\n                    La\n                    <sub>\n                      <i>x</i>\n                    </sub>\n                    CuO\n                    <sub>2</sub>\n                    on (110) DyScO\n                    <sub>3</sub>"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848660321094528","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Growth and Properties of $a$-Axis Oriented Thin Films of Infinite-Layer $\\hbox{Sr}_{1 - x}\\hbox{La}_{x} \\hbox{CuO}_{2}$"}]},{"@id":"https://cir.nii.ac.jp/crid/1390578083318871424","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"MBE Growth and Element-distinctive Atomic-resolution Characterization of High Temperature Superconductors"}]},{"@id":"https://cir.nii.ac.jp/crid/1520010380482348416","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Molecular Beam Epitaxy and Transport Properties of Infinite-Layer Sr0.90La0.10CuO₂ Thin Films"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.1688979"},{"@type":"CROSSREF","@value":"10.1143/apex.5.043101_references_DOI_J9JV81VkIpuePIWl83AlltE0afG"},{"@type":"CROSSREF","@value":"10.7567/apex.9.023101_references_DOI_J9JV81VkIpuePIWl83AlltE0afG"},{"@type":"CROSSREF","@value":"10.53829/ntr201910fa4_references_DOI_J9JV81VkIpuePIWl83AlltE0afG"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/ac50bc_references_DOI_J9JV81VkIpuePIWl83AlltE0afG"},{"@type":"CROSSREF","@value":"10.1109/tasc.2013.2255946_references_DOI_J9JV81VkIpuePIWl83AlltE0afG"}]}