著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Lian C. T. Shoute and Nikola Pekas and Yiliang Wu and Richard L. McCreery,Redox driven conductance changes for resistive memory,Applied Physics A,0947-8396,Springer Science and Business Media LLC,2011-01-26,102,4,841-850,https://cir.nii.ac.jp/crid/1362825895580856320,https://doi.org/10.1007/s00339-011-6268-5