{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362825896068002048.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1111/j.1365-2818.1988.tb01444.x"}},{"identifier":{"@type":"URI","@value":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1111%2Fj.1365-2818.1988.tb01444.x"}},{"identifier":{"@type":"URI","@value":"https://onlinelibrary.wiley.com/doi/pdf/10.1111/j.1365-2818.1988.tb01444.x"}}],"dc:title":[{"@value":"A real space investigation of the dimer defect structure of Si(001)‐(2times8)"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>SUMMARY</jats:title><jats:p>The atomic arrangement of the Si(001)‐(2 times 8) surface has been directly imaged in real space by scanning tunnelling microscopy. The superstructure is impurity induced and stablilized by as little as 1% Ni. Clean Si(001) surfaces do not form the (2times8) phase. The two‐dimensional Fourier transforms of the STM topographs correspond well to the (2times8) LEED pattern, but the real space images are in fact considerably more complex than previously concluded on the basis of recent diffraction technique measurements. The STM images clearly demonstrate that the (2times8) surface consists of a complex missing dimer structure, namely one and multiple dimer vacancies. Such a dimer defect appears related to the Ni impurity and intimately related to the ordering of the dimer defects probably by third layer dimerization to produce quasi‐ordered ‘channels’.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380569723019719432","@type":"Researcher","foaf:name":[{"@value":"H. Niehus"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825896068002051","@type":"Researcher","foaf:name":[{"@value":"U. K. Köhler"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825896068002050","@type":"Researcher","foaf:name":[{"@value":"M. Copel"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825896068002048","@type":"Researcher","foaf:name":[{"@value":"J. E. Demuth"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00222720"},{"@type":"EISSN","@value":"13652818"}],"prism:publicationName":[{"@value":"Journal of Microscopy"}],"dc:publisher":[{"@value":"Wiley"}],"prism:publicationDate":"1988-12","prism:volume":"152","prism:number":"3","prism:startingPage":"735","prism:endingPage":"742"},"reviewed":"false","dc:rights":["http://onlinelibrary.wiley.com/termsAndConditions#vor"],"url":[{"@id":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1111%2Fj.1365-2818.1988.tb01444.x"},{"@id":"https://onlinelibrary.wiley.com/doi/pdf/10.1111/j.1365-2818.1988.tb01444.x"}],"createdAt":"2011-08-02","modifiedAt":"2023-10-21","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360566396795722624","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Ordering of Missing-Row-Defects Forming (2×n)-Bi Phases on the Si(100) 2×1 Surface Studied by the Scanning Tunneling Microscopy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871785816960","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Study of Ga Adsorption Structure on Ni/Si(100) Surface by Scanning Tunneling Microscopy"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204177762688","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Electronic Structures of the Single-Domain Si(001)2×1 and 2×8 Surfaces"},{"@language":"ja-Kana","@value":"Electronic Structures of the Single Dom"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206249521792","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Barrier Height Imaging of Si(001) 2 * n."},{"@value":"Barrier-Height lmaging of Si(001) 2 x n"},{"@language":"ja-Kana","@value":"Barrier-Height lmaging of Si ( 001 ) 2"},{"@value":"Barrier-Height Imaging of Si(001) 2 ×  n"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206252122752","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Reduced Density of Missing-Dimer Vacancies on Tangsten-Contaminated Si(100)-(2 * n) Surface by Hydrogen Termination."},{"@value":"Reduced Density of Missing-Dimer Vacancies on Tungsten-Contaminated Si(100)-(2×n)  Surface by Hydrogen Termination"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282680163886336","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Initial-Stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1111/j.1365-2818.1988.tb01444.x"},{"@type":"CROSSREF","@value":"10.1380/ejssnt.2006.285_references_DOI_CBCxN8HZieI3fbspuwKmyjgeeMn"},{"@type":"CROSSREF","@value":"10.1143/jjap.39.4518_references_DOI_CBCxN8HZieI3fbspuwKmyjgeeMn"},{"@type":"CROSSREF","@value":"10.1143/jjap.32.l528_references_DOI_CBCxN8HZieI3fbspuwKmyjgeeMn"},{"@type":"CROSSREF","@value":"10.1143/jjap.49.08lb03_references_DOI_CBCxN8HZieI3fbspuwKmyjgeeMn"},{"@type":"CROSSREF","@value":"10.1143/jpsj.59.657_references_DOI_CBCxN8HZieI3fbspuwKmyjgeeMn"},{"@type":"CROSSREF","@value":"10.1143/jjap.37.3785_references_DOI_CBCxN8HZieI3fbspuwKmyjgeeMn"}]}