著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
T. T. Pham and M. Gutiérrez and C. Masante and N. Rouger and D. Eon and E. Gheeraert and D. Araùjo and J. Pernot,High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication,Applied Physics Letters,0003-6951,AIP Publishing,2018-03-05,112,10,102103,https://cir.nii.ac.jp/crid/1362825896086150272,https://doi.org/10.1063/1.5018403