{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1362825896202096384.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1557/proc-640-h3.2"}},{"identifier":{"@type":"URI","@value":"https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400647061"}}],"dc:title":[{"@value":"Traps at the SiC/SiO<sub>2</sub>-Interface"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>ABSTRACT</jats:title><jats:p>The density of interface states Dit at SiC/SiO<jats:sub>2</jats:sub> interfaces of different SiC polytypes (4H-, 6H- and 15R-SiC) is monitored and the origin of these states is discussed. The hydrogenation behavior of interface states in the temperature range from 250°C to 1000°C is studied by C-V and G-V investigations. The strong increase of Dit close to the 4H-SiC conduction band is attributed to defects located in the oxide (so-called “Near Interface Traps”).</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1382825896202096386","@type":"Researcher","foaf:name":[{"@value":"Gerhard Pensl"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825896202096388","@type":"Researcher","foaf:name":[{"@value":"Michael Bassler"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825896202096390","@type":"Researcher","foaf:name":[{"@value":"Florin Ciobanu"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825896202096387","@type":"Researcher","foaf:name":[{"@value":"Valeri Afanas'ev"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825896202096389","@type":"Researcher","foaf:name":[{"@value":"Hiroshi Yano"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825896202096384","@type":"Researcher","foaf:name":[{"@value":"Tsunenobu Kimoto"}]},{"@id":"https://cir.nii.ac.jp/crid/1382825896202096385","@type":"Researcher","foaf:name":[{"@value":"Hiroyuki Matsunami"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"02729172"},{"@type":"EISSN","@value":"19464274"}],"prism:publicationName":[{"@value":"MRS Proceedings"}],"dc:publisher":[{"@value":"Springer Science and Business Media LLC"}],"prism:publicationDate":"2000","prism:volume":"640"},"reviewed":"false","dc:rights":["https://www.cambridge.org/core/terms"],"url":[{"@id":"https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400647061"}],"createdAt":"2011-04-05","modifiedAt":"2021-02-24","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360845538913772800","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848664792465536","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1557/proc-640-h3.2"},{"@type":"OPENAIRE","@value":"doi_dedup___::7fa66f81228d8e988e69d618112b5fd6"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.06ka04_references_DOI_3bLUUKThr2HzBpqkovmIfUxuoQ9"},{"@type":"CROSSREF","@value":"10.4028/www.scientific.net/msf.821-823.108_references_DOI_3bLUUKThr2HzBpqkovmIfUxuoQ9"}]}