Temperature dependence of the Urbach edge in GaAs

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  • S. R. Johnson
    Department of Physics, University of British Columbia, Vancouver V6T 1Z1, British Columbia, Canada
  • T. Tiedje
    Department of Physics, University of British Columbia, Vancouver V6T 1Z1, British Columbia, Canada

Bibliographic Information

Published
1995-11-01
DOI
  • 10.1063/1.359683
Publisher
AIP Publishing

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<jats:p>The temperature dependence of the optical-absorption edge (Urbach edge) of GaAs is measured in semi-insulating and n-type GaAs (n=2×1018 cm−3) over the temperature range from room temperature to 700 °C. Both the optical absorption and the temperature are measured using a diffuse reflectance technique. The characteristic energy of the exponential absorption edge is found to increase linearly with temperature, from 7.5 meV at room temperature to 12.4 meV at 700 °C, for semi-insulating GaAs. The temperature dependent part of the width of the Urbach edge for semi-insulating GaAs is six times smaller than predicted by the standard theory where the edge width is proportional to the phonon population.</jats:p>

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