著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
P. Enquist and J. A. Hutchby and T. J. de Lyon,Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy,Journal of Applied Physics,0021-8979,AIP Publishing,1988-05-01,63,9,4485-4493,https://cir.nii.ac.jp/crid/1363388843721704192,https://doi.org/10.1063/1.340143