{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363388844059647872.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/0022-0248(78)90449-9"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:0022024878904499?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:0022024878904499?httpAccept=text/plain"}},{"identifier":{"@type":"NAID","@value":"80013915781"}}],"dc:title":[{"@value":"High efficiency GaAs thin film solar cells by peeled film technology"}],"description":[{"notation":[{"@value":"Abstract   p-GaAs/n-GaAs thin film concentrator solar cells were fabricated by Peeled Film Technology. This is the first paper that reports the concentration characteristics of thin film solar cells. The energy conversion efficiency of thin film solar cells at a concentration ratio of 109 is 9.4% and the output power density is 0.82 W/cm2 · n-Ga1−xAlxAs/p-GaAs heterojunction thin film solar cells were also fabricated. The initial heterojunction thin film solar cell with a Al mole fraction of 0.5 showed an efficiency of up to 13.5% (AM 1.5). It is proposed that Multi-Peeled Film Technology will give numerous GaAs thin films by selective etching of (GaAl)As/GaAs multi-layered structures."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383388844059647874","@type":"Researcher","foaf:name":[{"@value":"Makoto Konagai"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388844059647872","@type":"Researcher","foaf:name":[{"@value":"Mitsunori Sugimoto"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388844059647873","@type":"Researcher","foaf:name":[{"@value":"Kiyoshi Takahashi"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00220248"}],"prism:publicationName":[{"@value":"Journal of Crystal Growth"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"1978-12","prism:volume":"45","prism:startingPage":"277","prism:endingPage":"280"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:0022024878904499?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:0022024878904499?httpAccept=text/plain"}],"createdAt":"2002-10-16","modifiedAt":"2019-04-07","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050020984037959424","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Semiconductor Wafer Bonding for Solar Cell Applications: A Review"}]},{"@id":"https://cir.nii.ac.jp/crid/1050564287490597376","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures 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